TY - JOUR
T1 - Interdiffusion and carrier recombination in high intensity transient gratings
AU - Schwarz, R.
AU - Grebner, S.
AU - Nebel, C. E.
AU - Lanz, M.
AU - Stutzmann, M.
PY - 1996
Y1 - 1996
N2 - Transient grating (TG) experiments were performed to study carrier diffusion and recombination in amorphous silicon films (a-Si:H) at high light intensities using 8 ns pulses from a frequency-doubled Nd:YAG laser. The ambipolar diffusion coefficients reached about 10-2cm2/s, which is 2 orders of magnitude larger than the steady-state value. Similar results were obtained in intrinsic, p-, and n-doped a-Si:H films, indicating that the diffusion coefficients in all cases reflect the near band edge mobility of the slower carriers, that is holes. In particular, the p-type sample shows an initially fast, then a slow grating efficiency decay, consistent with dispersive transport.
AB - Transient grating (TG) experiments were performed to study carrier diffusion and recombination in amorphous silicon films (a-Si:H) at high light intensities using 8 ns pulses from a frequency-doubled Nd:YAG laser. The ambipolar diffusion coefficients reached about 10-2cm2/s, which is 2 orders of magnitude larger than the steady-state value. Similar results were obtained in intrinsic, p-, and n-doped a-Si:H films, indicating that the diffusion coefficients in all cases reflect the near band edge mobility of the slower carriers, that is holes. In particular, the p-type sample shows an initially fast, then a slow grating efficiency decay, consistent with dispersive transport.
UR - http://www.scopus.com/inward/record.url?scp=0030379505&partnerID=8YFLogxK
U2 - 10.1557/proc-420-723
DO - 10.1557/proc-420-723
M3 - Conference article
AN - SCOPUS:0030379505
SN - 0272-9172
VL - 420
SP - 723
EP - 728
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Proceedings of the 1996 MRS Spring Symposium
Y2 - 8 April 1996 through 12 April 1996
ER -