Interaction between electronic and phonon Raman scattering in hole space charge layers on silicon

M. Baumgartner; G. Abstreiter

doi:10.1016/0039-6028(84)90334-0

Interaction between electronic and phonon Raman scattering in hole space charge layers on silicon

M. Baumgartner, G. Abstreiter

TUM Emeriti of Excellence

Technical University of Munich

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The interaction of quasi-continuous electronic excitations in hole space charge layers of Si with the optical phonons is investigated. The induced asymmetric broadening of the one-phonon line can be understood as a quantum mechanical interference of the continuum excitations with the discrete energy state. The lineschape is directly related to electron-phonon interaction matrix elements.

Original language	English
Pages (from-to)	357-360
Number of pages	4
Journal	Surface Science
Volume	142
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(84)90334-0
State	Published - 1 Jul 1984

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title = "Interaction between electronic and phonon Raman scattering in hole space charge layers on silicon",

abstract = "The interaction of quasi-continuous electronic excitations in hole space charge layers of Si with the optical phonons is investigated. The induced asymmetric broadening of the one-phonon line can be understood as a quantum mechanical interference of the continuum excitations with the discrete energy state. The lineschape is directly related to electron-phonon interaction matrix elements.",

author = "M. Baumgartner and G. Abstreiter",

note = "Funding Information: This work has been supported by the Deutsche Forschungsgemeinschaft via Sonderforschungsbereich 128.",

year = "1984",

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doi = "10.1016/0039-6028(84)90334-0",

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T1 - Interaction between electronic and phonon Raman scattering in hole space charge layers on silicon

AU - Baumgartner, M.

AU - Abstreiter, G.

N1 - Funding Information: This work has been supported by the Deutsche Forschungsgemeinschaft via Sonderforschungsbereich 128.

PY - 1984/7/1

Y1 - 1984/7/1

N2 - The interaction of quasi-continuous electronic excitations in hole space charge layers of Si with the optical phonons is investigated. The induced asymmetric broadening of the one-phonon line can be understood as a quantum mechanical interference of the continuum excitations with the discrete energy state. The lineschape is directly related to electron-phonon interaction matrix elements.

AB - The interaction of quasi-continuous electronic excitations in hole space charge layers of Si with the optical phonons is investigated. The induced asymmetric broadening of the one-phonon line can be understood as a quantum mechanical interference of the continuum excitations with the discrete energy state. The lineschape is directly related to electron-phonon interaction matrix elements.

UR - http://www.scopus.com/inward/record.url?scp=48549112813&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(84)90334-0

DO - 10.1016/0039-6028(84)90334-0

M3 - Article

AN - SCOPUS:48549112813

SN - 0039-6028

VL - 142

SP - 357

EP - 360

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Interaction between electronic and phonon Raman scattering in hole space charge layers on silicon

Abstract

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