Abstract
Carbon Nanotubes (CNTs) offer extraordinary properties for applications in microelectronics. We assess the methods used to grow CNTs for integration into microelectronics, in particular, metallic carbon nanotubes for vias and interconnects as well as semiconducting CNTs for field-effect devices are discussed. State-of-the-art CNTFETs are compared to Si-MOSFETs. A vertical CNTFET (VCNTFET) device concept is presented which offers better growth control, adding a new quality to microelectronics and making real 3-dimensional electronics possible.
Original language | English |
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Pages (from-to) | 3-15 |
Number of pages | 13 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 772 |
DOIs | |
State | Published - 2003 |
Externally published | Yes |
Event | Materials Research Society Symposium Proceedings: Nanotube-Based Devices - San Francisco, Ca., United States Duration: 22 Apr 2003 → 25 Apr 2003 |