InP-based vertical-cavity surface-emitting lasers with high output power and large modulation bandwidth

R. Shau; G. Böhm; F. Köhler; M. C. Amann; M. Ortsiefer; J. Roßkopf

InP-based vertical-cavity surface-emitting lasers with high output power and large modulation bandwidth

R. Shau
, G. Böhm
, F. Köhler
, M. C. Amann
, M. Ortsiefer
, J. Roßkopf

Chair of Semiconductor Technology

Walter Schottky Institut
Vertilas GmbH

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The indium phosphide (InP)-based vertical-cavity surface-emitting lasers (VCSEL) with high output and large modulation bandwidth were discussed. The VCSEL in the InP system from 1.31 μm to 1.81 μm enabling the buried tunnel junction (BTJ) technology with emphasis on output power, operation temperature and modulation speed was studied. The schematic cross section of the BTJ-VCSEL was presented.

Original language	English
Pages (from-to)	143-144
Number of pages	2
Journal	Conference Digest - IEEE International Semiconductor Laser Conference
State	Published - 2002
Event	2002 IEEE 18th International Semiconductor Laser Conference: Conference Digest - Garmish, Germany Duration: 29 Sep 2002 → 3 Oct 2002

Cite this

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title = "InP-based vertical-cavity surface-emitting lasers with high output power and large modulation bandwidth",

abstract = "The indium phosphide (InP)-based vertical-cavity surface-emitting lasers (VCSEL) with high output and large modulation bandwidth were discussed. The VCSEL in the InP system from 1.31 μm to 1.81 μm enabling the buried tunnel junction (BTJ) technology with emphasis on output power, operation temperature and modulation speed was studied. The schematic cross section of the BTJ-VCSEL was presented.",

author = "R. Shau and G. B{\"o}hm and F. K{\"o}hler and Amann, \{M. C.\} and M. Ortsiefer and J. Ro{\ss}kopf",

year = "2002",

language = "English",

pages = "143--144",

journal = "Conference Digest - IEEE International Semiconductor Laser Conference",

issn = "0899-9406",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE 18th International Semiconductor Laser Conference: Conference Digest ; Conference date: 29-09-2002 Through 03-10-2002",

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TY - JOUR

T1 - InP-based vertical-cavity surface-emitting lasers with high output power and large modulation bandwidth

AU - Shau, R.

AU - Böhm, G.

AU - Köhler, F.

AU - Amann, M. C.

AU - Ortsiefer, M.

AU - Roßkopf, J.

PY - 2002

Y1 - 2002

N2 - The indium phosphide (InP)-based vertical-cavity surface-emitting lasers (VCSEL) with high output and large modulation bandwidth were discussed. The VCSEL in the InP system from 1.31 μm to 1.81 μm enabling the buried tunnel junction (BTJ) technology with emphasis on output power, operation temperature and modulation speed was studied. The schematic cross section of the BTJ-VCSEL was presented.

AB - The indium phosphide (InP)-based vertical-cavity surface-emitting lasers (VCSEL) with high output and large modulation bandwidth were discussed. The VCSEL in the InP system from 1.31 μm to 1.81 μm enabling the buried tunnel junction (BTJ) technology with emphasis on output power, operation temperature and modulation speed was studied. The schematic cross section of the BTJ-VCSEL was presented.

UR - https://www.scopus.com/pages/publications/0036451735

M3 - Conference article

AN - SCOPUS:0036451735

SN - 0899-9406

SP - 143

EP - 144

JO - Conference Digest - IEEE International Semiconductor Laser Conference

JF - Conference Digest - IEEE International Semiconductor Laser Conference

T2 - 2002 IEEE 18th International Semiconductor Laser Conference: Conference Digest

Y2 - 29 September 2002 through 3 October 2002

ER -

InP-based vertical-cavity surface-emitting lasers with high output power and large modulation bandwidth

Abstract

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