InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0 μm

Gerhard Boehm; Markus Ortsiefer; Robert Shau; Juergen Rosskopf; Christian Lauer; Markus Maute; Fabian Köhler; Felix Mederer; Ralf Meyer; Markus Christian Amann

doi:10.1016/S0022-0248(02)02193-0

InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0 μm

Gerhard Boehm
, Markus Ortsiefer
, Robert Shau
, Juergen Rosskopf
, Christian Lauer
, Markus Maute
, Fabian Köhler
, Felix Mederer
, Ralf Meyer
, Markus Christian Amann

Chair of Semiconductor Technology

Walter Schottky Institut
Vertilas GmbH
University of Ulm

Research output: Contribution to journal › Conference article › peer-review

47 Scopus citations

Abstract

Buried tunnel junction vertical-cavity surface-emitting lasers (BTJ-VCSELs) are demonstrated as light sources in the wavelength range from 1.3 to 2.0 μm. Continuous-wave operation at room temperature could be achieved for the whole wavelength range. This emphasizes not only the sophisticated device design but also the excellent suitability of the material system AlGaInAs/InP. Advantages and restrictions are discussed in this paper. Transmission experiments with single-mode VCSELs at 1.55 μm show error-free data transmission at modulation frequencies up to 10 Gbit/s. At 1.68 and 1.80 μm, gas sensing experiments detecting methane and water, respectively, could be successfully performed.

Original language	English
Pages (from-to)	748-753
Number of pages	6
Journal	Journal of Crystal Growth
Volume	251
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-0248(02)02193-0
State	Published - Apr 2003
Event	Proceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States Duration: 15 Sep 2002 → 20 Sep 2002

Keywords

A3. Molecular beam epitaxy
B1. Arsenides
B2. Semiconducting quaternary alloys
B3. Laser diodes

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10.1016/S0022-0248(02)02193-0

Cite this

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title = "InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0 μm",

abstract = "Buried tunnel junction vertical-cavity surface-emitting lasers (BTJ-VCSELs) are demonstrated as light sources in the wavelength range from 1.3 to 2.0 μm. Continuous-wave operation at room temperature could be achieved for the whole wavelength range. This emphasizes not only the sophisticated device design but also the excellent suitability of the material system AlGaInAs/InP. Advantages and restrictions are discussed in this paper. Transmission experiments with single-mode VCSELs at 1.55 μm show error-free data transmission at modulation frequencies up to 10 Gbit/s. At 1.68 and 1.80 μm, gas sensing experiments detecting methane and water, respectively, could be successfully performed.",

keywords = "A3. Molecular beam epitaxy, B1. Arsenides, B2. Semiconducting quaternary alloys, B3. Laser diodes",

author = "Gerhard Boehm and Markus Ortsiefer and Robert Shau and Juergen Rosskopf and Christian Lauer and Markus Maute and Fabian K{\"o}hler and Felix Mederer and Ralf Meyer and Amann, \{Markus Christian\}",

year = "2003",

month = apr,

doi = "10.1016/S0022-0248(02)02193-0",

language = "English",

volume = "251",

pages = "748--753",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

note = "Proceedings of the Molecular Beam Epitaxy 2002 ; Conference date: 15-09-2002 Through 20-09-2002",

}

TY - JOUR

T1 - InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0 μm

AU - Boehm, Gerhard

AU - Ortsiefer, Markus

AU - Shau, Robert

AU - Rosskopf, Juergen

AU - Lauer, Christian

AU - Maute, Markus

AU - Köhler, Fabian

AU - Mederer, Felix

AU - Meyer, Ralf

AU - Amann, Markus Christian

PY - 2003/4

Y1 - 2003/4

N2 - Buried tunnel junction vertical-cavity surface-emitting lasers (BTJ-VCSELs) are demonstrated as light sources in the wavelength range from 1.3 to 2.0 μm. Continuous-wave operation at room temperature could be achieved for the whole wavelength range. This emphasizes not only the sophisticated device design but also the excellent suitability of the material system AlGaInAs/InP. Advantages and restrictions are discussed in this paper. Transmission experiments with single-mode VCSELs at 1.55 μm show error-free data transmission at modulation frequencies up to 10 Gbit/s. At 1.68 and 1.80 μm, gas sensing experiments detecting methane and water, respectively, could be successfully performed.

AB - Buried tunnel junction vertical-cavity surface-emitting lasers (BTJ-VCSELs) are demonstrated as light sources in the wavelength range from 1.3 to 2.0 μm. Continuous-wave operation at room temperature could be achieved for the whole wavelength range. This emphasizes not only the sophisticated device design but also the excellent suitability of the material system AlGaInAs/InP. Advantages and restrictions are discussed in this paper. Transmission experiments with single-mode VCSELs at 1.55 μm show error-free data transmission at modulation frequencies up to 10 Gbit/s. At 1.68 and 1.80 μm, gas sensing experiments detecting methane and water, respectively, could be successfully performed.

KW - A3. Molecular beam epitaxy

KW - B1. Arsenides

KW - B2. Semiconducting quaternary alloys

KW - B3. Laser diodes

UR - https://www.scopus.com/pages/publications/0037380486

U2 - 10.1016/S0022-0248(02)02193-0

DO - 10.1016/S0022-0248(02)02193-0

M3 - Conference article

AN - SCOPUS:0037380486

SN - 0022-0248

VL - 251

SP - 748

EP - 753

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

T2 - Proceedings of the Molecular Beam Epitaxy 2002

Y2 - 15 September 2002 through 20 September 2002

ER -

InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0 μm

Abstract

Keywords

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