@inproceedings{d3756a49819e4909afe8ebdf7bc698b9,
title = "InP-based type-II heterostructure lasers for wavelengths up to 2.7 μm",
abstract = "Type-II light sources on InP substrate are an innovative concept for wavelengths ranging from 2 {\^I}1/4m to the mid-IR. The concept is using the type-II band alignment between GaInAs and GaAsSb to exceed the limitation of type-I devices. Since the first demonstration of InP type-II heterostructure lasers above 2.3 {\^I}1/4m in 2012, we have extended the emission wavelength to 2.7 {\^I}1/4m. Furthermore, a drastic reduction in threshold current density down to 104 A/cm2 per QW at infinite length was achieved (at 2.5 {\^I}1/4m), which represents an improvement by more than a factor of two. Additionally CW operation up to 30°C and up to 80°C pulsed is presented. Furthermore, LEDs for 3.5{\^I}1/4m peak emission wavelength and up to 86 {\^I}1/4W output power are shown.",
keywords = "InP, LED, MIR, NIR, VCSEL, W-shaped, edge emitting laser, long wavelength, quantum well, semiconductor laser, type-II quantum well, vertical cavity surface emitting laser",
author = "Stephan Sprengel and Veerabathran, {Ganpath K.} and Alexander Andrejew and Anna K{\"o}ninger and Gerhard Boehm and Christian Grasse and Amann, {Markus Christian}",
note = "Publisher Copyright: {\textcopyright} 2015 SPIE.; Novel In-Plane Semiconductor Lasers XIV ; Conference date: 09-02-2015 Through 12-02-2015",
year = "2015",
doi = "10.1117/12.2078779",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Smowton, {Peter M.} and Belyanin, {Alexey A.}",
booktitle = "Novel In-Plane Semiconductor Lasers XIV",
}