InP-based type-II heterostructure lasers for wavelengths up to 2.7 μm

Stephan Sprengel, Ganpath K. Veerabathran, Alexander Andrejew, Anna Köninger, Gerhard Boehm, Christian Grasse, Markus Christian Amann

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

11 Scopus citations


Type-II light sources on InP substrate are an innovative concept for wavelengths ranging from 2 Î1/4m to the mid-IR. The concept is using the type-II band alignment between GaInAs and GaAsSb to exceed the limitation of type-I devices. Since the first demonstration of InP type-II heterostructure lasers above 2.3 Î1/4m in 2012, we have extended the emission wavelength to 2.7 Î1/4m. Furthermore, a drastic reduction in threshold current density down to 104 A/cm2 per QW at infinite length was achieved (at 2.5 Î1/4m), which represents an improvement by more than a factor of two. Additionally CW operation up to 30°C and up to 80°C pulsed is presented. Furthermore, LEDs for 3.5Î1/4m peak emission wavelength and up to 86 Î1/4W output power are shown.

Original languageEnglish
Title of host publicationNovel In-Plane Semiconductor Lasers XIV
EditorsPeter M. Smowton, Alexey A. Belyanin
ISBN (Electronic)9781628414721
StatePublished - 2015
EventNovel In-Plane Semiconductor Lasers XIV - San Francisco, United States
Duration: 9 Feb 201512 Feb 2015

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceNovel In-Plane Semiconductor Lasers XIV
Country/TerritoryUnited States
CitySan Francisco


  • InP
  • LED
  • MIR
  • NIR
  • W-shaped
  • edge emitting laser
  • long wavelength
  • quantum well
  • semiconductor laser
  • type-II quantum well
  • vertical cavity surface emitting laser


Dive into the research topics of 'InP-based type-II heterostructure lasers for wavelengths up to 2.7 μm'. Together they form a unique fingerprint.

Cite this