InP-based type-II heterostructure lasers for wavelength above 2 μm

Stephan Sprengel; Alexander Andrejew; Ganpath Kumar Veerabathran; Florian Federer; Gerhard Boehm; Christian Grasse; Markus Christian Amann

doi:10.1109/SUM.2014.48

InP-based type-II heterostructure lasers for wavelength above 2 μm

Stephan Sprengel, Alexander Andrejew, Ganpath Kumar Veerabathran, Florian Federer, Gerhard Boehm, Christian Grasse, Markus Christian Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

We present an innovative concept for InP-based lasers utilizing the type-II band alignment between GaAsSb and GaInAs. With W-shaped QWs spontaneous room temperature emission up to 3.9 μm and lasing up to 2.6 μm could be demonstrated.

Original language	English
Title of host publication	Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	79-80
Number of pages	2
ISBN (Electronic)	9781479927678
DOIs	https://doi.org/10.1109/SUM.2014.48
State	Published - 18 Sep 2014
Event	2014 Summer Topicals Meeting Series, SUM 2014 - Montreal, Canada Duration: 14 Jul 2014 → 16 Jul 2014

Publication series

Name	Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014

Conference

Conference	2014 Summer Topicals Meeting Series, SUM 2014
Country/Territory	Canada
City	Montreal
Period	14/07/14 → 16/07/14

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10.1109/SUM.2014.48

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Sprengel, S., Andrejew, A., Veerabathran, G. K., Federer, F., Boehm, G., Grasse, C., & Amann, M. C. (2014). InP-based type-II heterostructure lasers for wavelength above 2 μm. In Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014 (pp. 79-80). Article 6902996 (Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SUM.2014.48

@inproceedings{2c35e35a565d451c8f2e091c4933f026,

title = "InP-based type-II heterostructure lasers for wavelength above 2 μm",

abstract = "We present an innovative concept for InP-based lasers utilizing the type-II band alignment between GaAsSb and GaInAs. With W-shaped QWs spontaneous room temperature emission up to 3.9 μm and lasing up to 2.6 μm could be demonstrated.",

author = "Stephan Sprengel and Alexander Andrejew and Veerabathran, {Ganpath Kumar} and Florian Federer and Gerhard Boehm and Christian Grasse and Amann, {Markus Christian}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 Summer Topicals Meeting Series, SUM 2014 ; Conference date: 14-07-2014 Through 16-07-2014",

year = "2014",

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doi = "10.1109/SUM.2014.48",

language = "English",

series = "Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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booktitle = "Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014",

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Sprengel, S, Andrejew, A, Veerabathran, GK, Federer, F, Boehm, G, Grasse, C & Amann, MC 2014, InP-based type-II heterostructure lasers for wavelength above 2 μm. in Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014., 6902996, Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014, Institute of Electrical and Electronics Engineers Inc., pp. 79-80, 2014 Summer Topicals Meeting Series, SUM 2014, Montreal, Canada, 14/07/14. https://doi.org/10.1109/SUM.2014.48

InP-based type-II heterostructure lasers for wavelength above 2 μm. / Sprengel, Stephan; Andrejew, Alexander; Veerabathran, Ganpath Kumar et al.
Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 79-80 6902996 (Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - InP-based type-II heterostructure lasers for wavelength above 2 μm

AU - Sprengel, Stephan

AU - Andrejew, Alexander

AU - Veerabathran, Ganpath Kumar

AU - Federer, Florian

AU - Boehm, Gerhard

AU - Grasse, Christian

AU - Amann, Markus Christian

PY - 2014/9/18

Y1 - 2014/9/18

N2 - We present an innovative concept for InP-based lasers utilizing the type-II band alignment between GaAsSb and GaInAs. With W-shaped QWs spontaneous room temperature emission up to 3.9 μm and lasing up to 2.6 μm could be demonstrated.

AB - We present an innovative concept for InP-based lasers utilizing the type-II band alignment between GaAsSb and GaInAs. With W-shaped QWs spontaneous room temperature emission up to 3.9 μm and lasing up to 2.6 μm could be demonstrated.

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BT - Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 Summer Topicals Meeting Series, SUM 2014

Y2 - 14 July 2014 through 16 July 2014

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Sprengel S, Andrejew A, Veerabathran GK, Federer F, Boehm G, Grasse C et al. InP-based type-II heterostructure lasers for wavelength above 2 μm. In Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 79-80. 6902996. (Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014). doi: 10.1109/SUM.2014.48

InP-based type-II heterostructure lasers for wavelength above 2 μm

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