InP-based type-II heterostructure lasers for 2.5μm working CW at room temperature and above

Stephan Sprengel; Ganpath Kumar Veerabathran; Anna Koeninger; Florian Federer; Gerhard Boehm; Markus Christian Amann

doi:10.1109/ISLC.2014.155

InP-based type-II heterostructure lasers for 2.5μm working CW at room temperature and above

Stephan Sprengel, Ganpath Kumar Veerabathran, Anna Koeninger, Florian Federer, Gerhard Boehm, Markus Christian Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

We present InP-based type-II lasers at 2.5μm, utilizing W-shaped GaAsSb/GaInAs QWs with strongly improved threshold current densities, down to 104A/cm2 per QW at infinite length, CW operation above RT and pulsed operation up to 80°C.

Original language	English
Title of host publication	Conference Digest - IEEE International Semiconductor Laser Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	44-45
Number of pages	2
ISBN (Electronic)	9781479957217
DOIs	https://doi.org/10.1109/ISLC.2014.155
State	Published - 16 Dec 2014
Event	2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 - Palma de Mallorca, Spain Duration: 7 Sep 2014 → 10 Sep 2014

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)	0899-9406

Conference

Conference	2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014
Country/Territory	Spain
City	Palma de Mallorca
Period	7/09/14 → 10/09/14

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10.1109/ISLC.2014.155

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Sprengel, S., Veerabathran, G. K., Koeninger, A., Federer, F., Boehm, G., & Amann, M. C. (2014). InP-based type-II heterostructure lasers for 2.5μm working CW at room temperature and above. In Conference Digest - IEEE International Semiconductor Laser Conference (pp. 44-45). Article 6987442 (Conference Digest - IEEE International Semiconductor Laser Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2014.155

Sprengel, Stephan ; Veerabathran, Ganpath Kumar ; Koeninger, Anna et al. / InP-based type-II heterostructure lasers for 2.5μm working CW at room temperature and above. Conference Digest - IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 44-45 (Conference Digest - IEEE International Semiconductor Laser Conference).

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title = "InP-based type-II heterostructure lasers for 2.5μm working CW at room temperature and above",

abstract = "We present InP-based type-II lasers at 2.5μm, utilizing W-shaped GaAsSb/GaInAs QWs with strongly improved threshold current densities, down to 104A/cm2 per QW at infinite length, CW operation above RT and pulsed operation up to 80°C.",

author = "Stephan Sprengel and Veerabathran, {Ganpath Kumar} and Anna Koeninger and Florian Federer and Gerhard Boehm and Amann, {Markus Christian}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 ; Conference date: 07-09-2014 Through 10-09-2014",

year = "2014",

month = dec,

day = "16",

doi = "10.1109/ISLC.2014.155",

language = "English",

series = "Conference Digest - IEEE International Semiconductor Laser Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Sprengel, S, Veerabathran, GK, Koeninger, A, Federer, F, Boehm, G & Amann, MC 2014, InP-based type-II heterostructure lasers for 2.5μm working CW at room temperature and above. in Conference Digest - IEEE International Semiconductor Laser Conference., 6987442, Conference Digest - IEEE International Semiconductor Laser Conference, Institute of Electrical and Electronics Engineers Inc., pp. 44-45, 2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014, Palma de Mallorca, Spain, 7/09/14. https://doi.org/10.1109/ISLC.2014.155

InP-based type-II heterostructure lasers for 2.5μm working CW at room temperature and above. / Sprengel, Stephan; Veerabathran, Ganpath Kumar; Koeninger, Anna et al.
Conference Digest - IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc., 2014. p. 44-45 6987442 (Conference Digest - IEEE International Semiconductor Laser Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - InP-based type-II heterostructure lasers for 2.5μm working CW at room temperature and above

AU - Sprengel, Stephan

AU - Veerabathran, Ganpath Kumar

AU - Koeninger, Anna

AU - Federer, Florian

AU - Boehm, Gerhard

AU - Amann, Markus Christian

PY - 2014/12/16

Y1 - 2014/12/16

N2 - We present InP-based type-II lasers at 2.5μm, utilizing W-shaped GaAsSb/GaInAs QWs with strongly improved threshold current densities, down to 104A/cm2 per QW at infinite length, CW operation above RT and pulsed operation up to 80°C.

AB - We present InP-based type-II lasers at 2.5μm, utilizing W-shaped GaAsSb/GaInAs QWs with strongly improved threshold current densities, down to 104A/cm2 per QW at infinite length, CW operation above RT and pulsed operation up to 80°C.

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T3 - Conference Digest - IEEE International Semiconductor Laser Conference

SP - 44

EP - 45

BT - Conference Digest - IEEE International Semiconductor Laser Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014

Y2 - 7 September 2014 through 10 September 2014

ER -

Sprengel S, Veerabathran GK, Koeninger A, Federer F, Boehm G, Amann MC. InP-based type-II heterostructure lasers for 2.5μm working CW at room temperature and above. In Conference Digest - IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc. 2014. p. 44-45. 6987442. (Conference Digest - IEEE International Semiconductor Laser Conference). doi: 10.1109/ISLC.2014.155

InP-based type-II heterostructure lasers for 2.5μm working CW at room temperature and above

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