InP-based 2.8-3.5 μm resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures

Christian Grasse; Peter Wiecha; Tobias Gruendl; Stephan Sprengel; Ralf Meyer; Markus Christian Amann

doi:10.1063/1.4768447

InP-based 2.8-3.5 μm resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures

Christian Grasse, Peter Wiecha, Tobias Gruendl, Stephan Sprengel, Ralf Meyer, Markus Christian Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

We present InP-based resonant-cavity light emitting diodes (LEDs), which are emitting at 2.8 μm, 3.3 μm, and 3.5 μm and were grown by metalorganic vapor phase epitaxy. This long wavelength electroluminescence is achieved by using highly strained GaInAs/GaAsSb type-II quantum wells. The performance of two different active region designs, superlattice (SL) and W-shaped quantum wells (W), is compared. Although continuous wave operation up to 80 °C could be proven, a spontaneous emission droop similar to nitride-based LEDs has been observed and is discussed.

Original language	English
Article number	221107
Journal	Applied Physics Letters
Volume	101
Issue number	22
DOIs	https://doi.org/10.1063/1.4768447
State	Published - 26 Nov 2012

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title = "InP-based 2.8-3.5 μm resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures",

abstract = "We present InP-based resonant-cavity light emitting diodes (LEDs), which are emitting at 2.8 μm, 3.3 μm, and 3.5 μm and were grown by metalorganic vapor phase epitaxy. This long wavelength electroluminescence is achieved by using highly strained GaInAs/GaAsSb type-II quantum wells. The performance of two different active region designs, superlattice (SL) and W-shaped quantum wells (W), is compared. Although continuous wave operation up to 80 °C could be proven, a spontaneous emission droop similar to nitride-based LEDs has been observed and is discussed.",

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AU - Grasse, Christian

AU - Wiecha, Peter

AU - Gruendl, Tobias

AU - Sprengel, Stephan

AU - Meyer, Ralf

AU - Amann, Markus Christian

PY - 2012/11/26

Y1 - 2012/11/26

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AB - We present InP-based resonant-cavity light emitting diodes (LEDs), which are emitting at 2.8 μm, 3.3 μm, and 3.5 μm and were grown by metalorganic vapor phase epitaxy. This long wavelength electroluminescence is achieved by using highly strained GaInAs/GaAsSb type-II quantum wells. The performance of two different active region designs, superlattice (SL) and W-shaped quantum wells (W), is compared. Although continuous wave operation up to 80 °C could be proven, a spontaneous emission droop similar to nitride-based LEDs has been observed and is discussed.

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ER -

InP-based 2.8-3.5 μm resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures

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