Innovative devices for integrated circuits - A design perspective

D. Schmitt-Landsiedel; C. Werner

doi:10.1016/j.sse.2009.01.007

Innovative devices for integrated circuits - A design perspective

D. Schmitt-Landsiedel, C. Werner

Medicine and Health

Technical University of Munich

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

MOS devices go 3D, new quantum effect devices appear in the research labs. This paper discusses the impact of various innovative device architectures on circuit design. Examples of circuits with FinFETs or Multi-Gate-FETs are shown and their performance is compared with classically scaled CMOS circuits both for digital and analog applications. As an example for novel quantum effect devices beyond CMOS we discuss circuits with Tunneling Field Effect Transistors and their combination with classical MOSFETs and MuGFETs. Finally the potential of more substantial paradigm changes in circuit design will be exploited for the example of magnetic quantum cellular automata using a novel integrated magnetic field clocking scheme.

Original language	English
Pages (from-to)	411-417
Number of pages	7
Journal	Solid-State Electronics
Volume	53
Issue number	4
DOIs	https://doi.org/10.1016/j.sse.2009.01.007
State	Published - Apr 2009

Keywords

CMOS
FinFET
Magnetic quantum cellular automata
MuGFET
Tunneling FET

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10.1016/j.sse.2009.01.007

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abstract = "MOS devices go 3D, new quantum effect devices appear in the research labs. This paper discusses the impact of various innovative device architectures on circuit design. Examples of circuits with FinFETs or Multi-Gate-FETs are shown and their performance is compared with classically scaled CMOS circuits both for digital and analog applications. As an example for novel quantum effect devices beyond CMOS we discuss circuits with Tunneling Field Effect Transistors and their combination with classical MOSFETs and MuGFETs. Finally the potential of more substantial paradigm changes in circuit design will be exploited for the example of magnetic quantum cellular automata using a novel integrated magnetic field clocking scheme.",

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AB - MOS devices go 3D, new quantum effect devices appear in the research labs. This paper discusses the impact of various innovative device architectures on circuit design. Examples of circuits with FinFETs or Multi-Gate-FETs are shown and their performance is compared with classically scaled CMOS circuits both for digital and analog applications. As an example for novel quantum effect devices beyond CMOS we discuss circuits with Tunneling Field Effect Transistors and their combination with classical MOSFETs and MuGFETs. Finally the potential of more substantial paradigm changes in circuit design will be exploited for the example of magnetic quantum cellular automata using a novel integrated magnetic field clocking scheme.

KW - CMOS

KW - FinFET

KW - Magnetic quantum cellular automata

KW - MuGFET

KW - Tunneling FET

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Innovative devices for integrated circuits - A design perspective

Abstract

Keywords

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