InGaAs-InGaAlAs-InP 2.21 μm diode lasers grown in MBE

G. K. Kuang; G. Böhm; N. Graf; M. Grau; G. Rösel; R. Meyer; M. C. Amann

InGaAs-InGaAlAs-InP 2.21 μm diode lasers grown in MBE

G. K. Kuang
, G. Böhm
, N. Graf
, M. Grau
, G. Rösel
, R. Meyer
, M. C. Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to conference › Paper › peer-review

Abstract

An InP-based strongly strained quantum well (QW) laser was grown using molecular beam epitaxy. The wavelength of the diode was as long as 2212 nm. The laser achieved a threshold current density of 520A/cm² and a characteristic temperature of 45 K.

Original language	English
Pages	52-53
Number of pages	2
State	Published - 2001
Event	Conference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, United States Duration: 6 May 2001 → 11 May 2001

Conference

Conference	Conference on Lasers and Electro-Optics (CLEO)
Country/Territory	United States
City	Baltimore, MD
Period	6/05/01 → 11/05/01

Cite this

@conference{169d3c9ab12047f3958413a704e68928,

title = "InGaAs-InGaAlAs-InP 2.21 μm diode lasers grown in MBE",

abstract = "An InP-based strongly strained quantum well (QW) laser was grown using molecular beam epitaxy. The wavelength of the diode was as long as 2212 nm. The laser achieved a threshold current density of 520A/cm2 and a characteristic temperature of 45 K.",

author = "Kuang, \{G. K.\} and G. B{\"o}hm and N. Graf and M. Grau and G. R{\"o}sel and R. Meyer and Amann, \{M. C.\}",

year = "2001",

language = "English",

pages = "52--53",

note = "Conference on Lasers and Electro-Optics (CLEO) ; Conference date: 06-05-2001 Through 11-05-2001",

}

TY - CONF

T1 - InGaAs-InGaAlAs-InP 2.21 μm diode lasers grown in MBE

AU - Kuang, G. K.

AU - Böhm, G.

AU - Graf, N.

AU - Grau, M.

AU - Rösel, G.

AU - Meyer, R.

AU - Amann, M. C.

PY - 2001

Y1 - 2001

N2 - An InP-based strongly strained quantum well (QW) laser was grown using molecular beam epitaxy. The wavelength of the diode was as long as 2212 nm. The laser achieved a threshold current density of 520A/cm2 and a characteristic temperature of 45 K.

AB - An InP-based strongly strained quantum well (QW) laser was grown using molecular beam epitaxy. The wavelength of the diode was as long as 2212 nm. The laser achieved a threshold current density of 520A/cm2 and a characteristic temperature of 45 K.

UR - https://www.scopus.com/pages/publications/0034812010

M3 - Paper

AN - SCOPUS:0034812010

SP - 52

EP - 53

T2 - Conference on Lasers and Electro-Optics (CLEO)

Y2 - 6 May 2001 through 11 May 2001

ER -

InGaAs-InGaAlAs-InP 2.21 μm diode lasers grown in MBE

Abstract

Conference

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