Information on the confinement potential in GaAs AlGaAs wires from magnetoluminescence experiments

F. Hirler, R. Strenz, R. Küchler, G. Abstreiter, G. Böhm, G. Weiman

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Shallow etched wires, dots and antidots have been prepared from remote-doped GaAs AlGaAs quantum wells. The luminescence of electrons and holes separated into adjacent lateral regions was studied with a magnetic field applied in the growth direction. The spatially indirect luminescence was found to shift in energy and become direct at high magnetic fields. Details of the shape of the confinement potential were obtained by simulating the energy shift numerically.

Original languageEnglish
Pages (from-to)591-596
Number of pages6
JournalSurface Science
Volume305
Issue number1-3
DOIs
StatePublished - 20 Mar 1994

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