Influence of thermal oxidation on the electronic properties of Pt Schottky contacts on GaN grown by molecular-beam epitaxy

O. Weidemann; E. Monroy; E. Hahn; M. Stutzmann; M. Eickhoff

doi:10.1063/1.1868863

Influence of thermal oxidation on the electronic properties of Pt Schottky contacts on GaN grown by molecular-beam epitaxy

O. Weidemann, E. Monroy, E. Hahn, M. Stutzmann, M. Eickhoff

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The effect of thermal oxidation on the electric properties of Pt Schottky contacts on Si-doped GaN films grown by plasma-assisted molecular-beam epitaxy was investigated. Significant improvement of the electrical contact characteristics mirrored by an increase of the effective Schottky barrier height and a decrease of the reverse bias leakage current by up to four orders of magnitude was observed for an oxidation temperature of 700 °C. Comparative analysis by atomic force microscopy and transmission electron microscopy revealed preferential oxidation of threading dislocations causing selective passivation of leakage current paths as the origin of the observed device improvement.

Original language	English
Article number	083507
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	8
DOIs	https://doi.org/10.1063/1.1868863
State	Published - 21 Feb 2005

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10.1063/1.1868863

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abstract = "The effect of thermal oxidation on the electric properties of Pt Schottky contacts on Si-doped GaN films grown by plasma-assisted molecular-beam epitaxy was investigated. Significant improvement of the electrical contact characteristics mirrored by an increase of the effective Schottky barrier height and a decrease of the reverse bias leakage current by up to four orders of magnitude was observed for an oxidation temperature of 700 °C. Comparative analysis by atomic force microscopy and transmission electron microscopy revealed preferential oxidation of threading dislocations causing selective passivation of leakage current paths as the origin of the observed device improvement.",

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AU - Weidemann, O.

AU - Monroy, E.

AU - Hahn, E.

AU - Stutzmann, M.

AU - Eickhoff, M.

PY - 2005/2/21

Y1 - 2005/2/21

N2 - The effect of thermal oxidation on the electric properties of Pt Schottky contacts on Si-doped GaN films grown by plasma-assisted molecular-beam epitaxy was investigated. Significant improvement of the electrical contact characteristics mirrored by an increase of the effective Schottky barrier height and a decrease of the reverse bias leakage current by up to four orders of magnitude was observed for an oxidation temperature of 700 °C. Comparative analysis by atomic force microscopy and transmission electron microscopy revealed preferential oxidation of threading dislocations causing selective passivation of leakage current paths as the origin of the observed device improvement.

AB - The effect of thermal oxidation on the electric properties of Pt Schottky contacts on Si-doped GaN films grown by plasma-assisted molecular-beam epitaxy was investigated. Significant improvement of the electrical contact characteristics mirrored by an increase of the effective Schottky barrier height and a decrease of the reverse bias leakage current by up to four orders of magnitude was observed for an oxidation temperature of 700 °C. Comparative analysis by atomic force microscopy and transmission electron microscopy revealed preferential oxidation of threading dislocations causing selective passivation of leakage current paths as the origin of the observed device improvement.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Influence of thermal oxidation on the electronic properties of Pt Schottky contacts on GaN grown by molecular-beam epitaxy

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