Influence of the RF power on the deposition rate and the chemical surface composition of fluorocarbon films prepared in dry etching gas plasma

V. Yanev; S. Krischok; A. Opitz; H. Wurmus; J. A. Schaefer; N. Schwesinger; S. I.U. Ahmed

doi:10.1016/j.susc.2004.06.096

Influence of the RF power on the deposition rate and the chemical surface composition of fluorocarbon films prepared in dry etching gas plasma

V. Yanev, S. Krischok, A. Opitz, H. Wurmus, J. A. Schaefer, N. Schwesinger, S. I.U. Ahmed

Computation, Information and Technology

Research output: Contribution to journal › Conference article › peer-review

25 Scopus citations

Abstract

Fluorocarbon (FC) films have technological applications in various fields such as microelectronics and MicroElectroMechanical Systems (MEMS). In this study, thin FC-films were deposited via plasma polymerisation of trifluoromethane (CHF₃) onto Si(111) in a commercial reactive ion etcher (RIE, radio-frequency RF = 13.56 MHz). The behaviour of the fluorocarbon deposition rate and the chemical composition as a function of the RF-power was investigated. The deposition rates of FC plasma polymers are strongly dependent on the RF-power. X-ray photoelectron spectroscopy (XPS) of the C1s core levels reveals that FC-films containing a high percentage of -CF₃ type bonds are formed at low RF powers with low deposition rates. However, at high deposition rates, the percentage of CF₃ bonds falls off sharply. This work demonstrates that tailoring the chemical composition of FC films is possible by careful variation of film deposition parameters.

Original language	English
Pages (from-to)	1229-1233
Number of pages	5
Journal	Surface Science
Volume	566-568
Issue number	1-3 PART 2
DOIs	https://doi.org/10.1016/j.susc.2004.06.096
State	Published - 20 Sep 2004
Event	Proceedings of the 22nd European Conference on Surface Science - Prague, Czech Republic Duration: 7 Sep 2003 → 12 Sep 2003

Keywords

Carbon
Halogens
Plasma processing
X-ray photoelectron spectroscopy

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10.1016/j.susc.2004.06.096

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title = "Influence of the RF power on the deposition rate and the chemical surface composition of fluorocarbon films prepared in dry etching gas plasma",

abstract = "Fluorocarbon (FC) films have technological applications in various fields such as microelectronics and MicroElectroMechanical Systems (MEMS). In this study, thin FC-films were deposited via plasma polymerisation of trifluoromethane (CHF3) onto Si(111) in a commercial reactive ion etcher (RIE, radio-frequency RF = 13.56 MHz). The behaviour of the fluorocarbon deposition rate and the chemical composition as a function of the RF-power was investigated. The deposition rates of FC plasma polymers are strongly dependent on the RF-power. X-ray photoelectron spectroscopy (XPS) of the C1s core levels reveals that FC-films containing a high percentage of -CF3 type bonds are formed at low RF powers with low deposition rates. However, at high deposition rates, the percentage of CF3 bonds falls off sharply. This work demonstrates that tailoring the chemical composition of FC films is possible by careful variation of film deposition parameters.",

keywords = "Carbon, Halogens, Plasma processing, X-ray photoelectron spectroscopy",

author = "V. Yanev and S. Krischok and A. Opitz and H. Wurmus and Schaefer, {J. A.} and N. Schwesinger and Ahmed, {S. I.U.}",

year = "2004",

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T1 - Influence of the RF power on the deposition rate and the chemical surface composition of fluorocarbon films prepared in dry etching gas plasma

AU - Yanev, V.

AU - Krischok, S.

AU - Opitz, A.

AU - Wurmus, H.

AU - Schaefer, J. A.

AU - Schwesinger, N.

AU - Ahmed, S. I.U.

PY - 2004/9/20

Y1 - 2004/9/20

N2 - Fluorocarbon (FC) films have technological applications in various fields such as microelectronics and MicroElectroMechanical Systems (MEMS). In this study, thin FC-films were deposited via plasma polymerisation of trifluoromethane (CHF3) onto Si(111) in a commercial reactive ion etcher (RIE, radio-frequency RF = 13.56 MHz). The behaviour of the fluorocarbon deposition rate and the chemical composition as a function of the RF-power was investigated. The deposition rates of FC plasma polymers are strongly dependent on the RF-power. X-ray photoelectron spectroscopy (XPS) of the C1s core levels reveals that FC-films containing a high percentage of -CF3 type bonds are formed at low RF powers with low deposition rates. However, at high deposition rates, the percentage of CF3 bonds falls off sharply. This work demonstrates that tailoring the chemical composition of FC films is possible by careful variation of film deposition parameters.

AB - Fluorocarbon (FC) films have technological applications in various fields such as microelectronics and MicroElectroMechanical Systems (MEMS). In this study, thin FC-films were deposited via plasma polymerisation of trifluoromethane (CHF3) onto Si(111) in a commercial reactive ion etcher (RIE, radio-frequency RF = 13.56 MHz). The behaviour of the fluorocarbon deposition rate and the chemical composition as a function of the RF-power was investigated. The deposition rates of FC plasma polymers are strongly dependent on the RF-power. X-ray photoelectron spectroscopy (XPS) of the C1s core levels reveals that FC-films containing a high percentage of -CF3 type bonds are formed at low RF powers with low deposition rates. However, at high deposition rates, the percentage of CF3 bonds falls off sharply. This work demonstrates that tailoring the chemical composition of FC films is possible by careful variation of film deposition parameters.

KW - Carbon

KW - Halogens

KW - Plasma processing

KW - X-ray photoelectron spectroscopy

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DO - 10.1016/j.susc.2004.06.096

M3 - Conference article

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SN - 0039-6028

VL - 566-568

SP - 1229

EP - 1233

JO - Surface Science

JF - Surface Science

IS - 1-3 PART 2

T2 - Proceedings of the 22nd European Conference on Surface Science

Y2 - 7 September 2003 through 12 September 2003

ER -

Influence of the RF power on the deposition rate and the chemical surface composition of fluorocarbon films prepared in dry etching gas plasma

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Keywords

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