Influence of the erbium and oxygen content on the electroluminescence of epitaxially grown erbium-doped silicon diodes

A. Reittinger; J. Stimmer; G. Abstreiter

doi:10.1063/1.118893

Influence of the erbium and oxygen content on the electroluminescence of epitaxially grown erbium-doped silicon diodes

A. Reittinger, J. Stimmer, G. Abstreiter

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

The electroluminescence behavior of erbium-oxygen-doped silicon light emitting diodes grown by molecular beam epitaxy was studied for a fixed oxygen to erbium concentration ratio of about six. The diodes were operated in reverse bias. An increase of the erbium and oxygen content leads to a stronger erbium intensity at 5 K up to an erbium concentration of 1.5×10²⁰ cm^-3, an enhanced decrease of the erbium intensity with higher temperatures, and a shift of the temperature quenching onset to lower temperatures. The strongest erbium electroluminescence emission in reverse bias in this set of samples was obtained from annealed Si:Er-diodes doped with concentrations of 5 ×10¹⁹, or 1.5×10²⁰ cm^-3 erbium and 3×10²⁰ or 3×10²¹ cm^-3 oxygen, respectively. Electroluminescence emission due to erbium was detected up to 440 K.

Original language	English
Pages (from-to)	2431-2433
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	18
DOIs	https://doi.org/10.1063/1.118893
State	Published - 5 May 1997

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title = "Influence of the erbium and oxygen content on the electroluminescence of epitaxially grown erbium-doped silicon diodes",

abstract = "The electroluminescence behavior of erbium-oxygen-doped silicon light emitting diodes grown by molecular beam epitaxy was studied for a fixed oxygen to erbium concentration ratio of about six. The diodes were operated in reverse bias. An increase of the erbium and oxygen content leads to a stronger erbium intensity at 5 K up to an erbium concentration of 1.5×1020 cm-3, an enhanced decrease of the erbium intensity with higher temperatures, and a shift of the temperature quenching onset to lower temperatures. The strongest erbium electroluminescence emission in reverse bias in this set of samples was obtained from annealed Si:Er-diodes doped with concentrations of 5 ×1019, or 1.5×1020 cm-3 erbium and 3×1020 or 3×1021 cm-3 oxygen, respectively. Electroluminescence emission due to erbium was detected up to 440 K.",

author = "A. Reittinger and J. Stimmer and G. Abstreiter",

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T1 - Influence of the erbium and oxygen content on the electroluminescence of epitaxially grown erbium-doped silicon diodes

AU - Reittinger, A.

AU - Stimmer, J.

AU - Abstreiter, G.

PY - 1997/5/5

Y1 - 1997/5/5

N2 - The electroluminescence behavior of erbium-oxygen-doped silicon light emitting diodes grown by molecular beam epitaxy was studied for a fixed oxygen to erbium concentration ratio of about six. The diodes were operated in reverse bias. An increase of the erbium and oxygen content leads to a stronger erbium intensity at 5 K up to an erbium concentration of 1.5×1020 cm-3, an enhanced decrease of the erbium intensity with higher temperatures, and a shift of the temperature quenching onset to lower temperatures. The strongest erbium electroluminescence emission in reverse bias in this set of samples was obtained from annealed Si:Er-diodes doped with concentrations of 5 ×1019, or 1.5×1020 cm-3 erbium and 3×1020 or 3×1021 cm-3 oxygen, respectively. Electroluminescence emission due to erbium was detected up to 440 K.

AB - The electroluminescence behavior of erbium-oxygen-doped silicon light emitting diodes grown by molecular beam epitaxy was studied for a fixed oxygen to erbium concentration ratio of about six. The diodes were operated in reverse bias. An increase of the erbium and oxygen content leads to a stronger erbium intensity at 5 K up to an erbium concentration of 1.5×1020 cm-3, an enhanced decrease of the erbium intensity with higher temperatures, and a shift of the temperature quenching onset to lower temperatures. The strongest erbium electroluminescence emission in reverse bias in this set of samples was obtained from annealed Si:Er-diodes doped with concentrations of 5 ×1019, or 1.5×1020 cm-3 erbium and 3×1020 or 3×1021 cm-3 oxygen, respectively. Electroluminescence emission due to erbium was detected up to 440 K.

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Influence of the erbium and oxygen content on the electroluminescence of epitaxially grown erbium-doped silicon diodes

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