Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes

O. Weidemann; M. Hermann; G. Steinhoff; H. Wingbrant; A. Lloyd Spetz; M. Stutzmann; M. Eickhoff

doi:10.1063/1.1593794

Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes

O. Weidemann, M. Hermann, G. Steinhoff, H. Wingbrant, A. Lloyd Spetz, M. Stutzmann, M. Eickhoff

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

100 Scopus citations

Abstract

Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes was studied. Ex-situ fabricated devices show a sensitivity towards molecular hydrogen, which is about 50 times higher than for in situ deposited diodes. In situ deposited Pd Schottky contacts reveal lower barrier heights and drastically higher reverse currents.

Original language	English
Pages (from-to)	773-775
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	4
DOIs	https://doi.org/10.1063/1.1593794
State	Published - 28 Jul 2003

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title = "Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes",

abstract = "Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes was studied. Ex-situ fabricated devices show a sensitivity towards molecular hydrogen, which is about 50 times higher than for in situ deposited diodes. In situ deposited Pd Schottky contacts reveal lower barrier heights and drastically higher reverse currents.",

author = "O. Weidemann and M. Hermann and G. Steinhoff and H. Wingbrant and {Lloyd Spetz}, A. and M. Stutzmann and M. Eickhoff",

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AU - Weidemann, O.

AU - Hermann, M.

AU - Steinhoff, G.

AU - Wingbrant, H.

AU - Lloyd Spetz, A.

AU - Stutzmann, M.

AU - Eickhoff, M.

PY - 2003/7/28

Y1 - 2003/7/28

N2 - Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes was studied. Ex-situ fabricated devices show a sensitivity towards molecular hydrogen, which is about 50 times higher than for in situ deposited diodes. In situ deposited Pd Schottky contacts reveal lower barrier heights and drastically higher reverse currents.

AB - Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes was studied. Ex-situ fabricated devices show a sensitivity towards molecular hydrogen, which is about 50 times higher than for in situ deposited diodes. In situ deposited Pd Schottky contacts reveal lower barrier heights and drastically higher reverse currents.

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U2 - 10.1063/1.1593794

DO - 10.1063/1.1593794

M3 - Article

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VL - 83

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EP - 775

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes

Abstract

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