Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors

Keyphrases

• Electrical Properties 100%
• Heterostructure 100%
• Oxygen Plasma 100%
• Undoped 100%
• High-power Transistors 100%
• Oxygen Influence 100%
• Methane Plasma 100%
• AlGaN/GaN Heterostructure 100%
• Rapid Thermal Annealing 66%
• Methane 33%
• Performance Degradation 33%
• High Power Density 33%
• Electrical Performance 33%
• Carrier Density 33%
• Electrical Characteristics 33%
• Molecular Beam Epitaxy 33%
• Carrier Mobility 33%
• Optical Performance 33%
• Sapphire Substrate 33%
• Carrier Concentration 33%
• Acceptor States 33%
• Hall Effect Measurement 33%
• Electrical Transport Properties 33%
• Metal-organic Chemical Vapor Deposition (MOCVD) 33%
• Capacitance-voltage 33%
• Ion Bombardment 33%
• Oxygen Effect 33%
• Reactive Ion Etching 33%
• Plasma-induced 33%
• Plasma-induced Damage 33%
• Deep Acceptor 33%
• 2D Electron Gas (2DEG) 33%
• High Mobility 33%
• Compound Semiconductor Device 33%
• Plasma Power Density 33%

Physics

• Methane 100%
• Transistor 100%
• Electrical Property 100%
• Semiconductor Device 50%
• Transport Property 50%
• Electron Gas 50%
• Metalorganic Chemical Vapor Deposition 50%
• Molecular Beam Epitaxy 50%
• Charge Transfer 50%
• Plasma Etching 50%
• Hall Effect 50%

Material Science

• Electrical Property 100%
• Heterojunction 100%
• Transistor 100%
• Density 40%
• Carrier Concentration 40%
• Chemical Vapor Deposition 20%
• Capacitance 20%
• Carrier Mobility 20%
• Reactive Ion Etching 20%
• Semiconductor Device 20%
• Molecular Beam Epitaxy 20%
• Sapphire 20%
• Compound Semiconductor 20%
• Ion Bombardment 20%
• Hall Effect 20%