Influence of Mosfet I-V Characteristics on Switching Delay Time of Cmos Inverters After Hot-Carrier Stress

Qin Wang; Wolfgang H. Krautschneider; Werner Weber; Doris Schmitt-Landsiedel

doi:10.1109/55.79569

Influence of Mosfet I-V Characteristics on Switching Delay Time of Cmos Inverters After Hot-Carrier Stress

Qin Wang, Wolfgang H. Krautschneider, Werner Weber, Doris Schmitt-Landsiedel

Siemens AG

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

In this paper, the relationship between hot-carrier degradation in MOSFET's and CMOS inverters is studied. We find that the device degradation characterized at the widely used bias points correlates poorly with the inverter degradation. We propose the use of new bias points that are more meaningful for circuit performance. Furthermore, a simple equation to calculate the degradation of the propagation delay is developed.

Original language	English
Pages (from-to)	238-240
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	12
Issue number	5
DOIs	https://doi.org/10.1109/55.79569
State	Published - May 1991
Externally published	Yes

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title = "Influence of Mosfet I-V Characteristics on Switching Delay Time of Cmos Inverters After Hot-Carrier Stress",

abstract = "In this paper, the relationship between hot-carrier degradation in MOSFET's and CMOS inverters is studied. We find that the device degradation characterized at the widely used bias points correlates poorly with the inverter degradation. We propose the use of new bias points that are more meaningful for circuit performance. Furthermore, a simple equation to calculate the degradation of the propagation delay is developed.",

author = "Qin Wang and Krautschneider, {Wolfgang H.} and Werner Weber and Doris Schmitt-Landsiedel",

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AU - Schmitt-Landsiedel, Doris

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N2 - In this paper, the relationship between hot-carrier degradation in MOSFET's and CMOS inverters is studied. We find that the device degradation characterized at the widely used bias points correlates poorly with the inverter degradation. We propose the use of new bias points that are more meaningful for circuit performance. Furthermore, a simple equation to calculate the degradation of the propagation delay is developed.

AB - In this paper, the relationship between hot-carrier degradation in MOSFET's and CMOS inverters is studied. We find that the device degradation characterized at the widely used bias points correlates poorly with the inverter degradation. We propose the use of new bias points that are more meaningful for circuit performance. Furthermore, a simple equation to calculate the degradation of the propagation delay is developed.

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Influence of Mosfet I-V Characteristics on Switching Delay Time of Cmos Inverters After Hot-Carrier Stress

Abstract

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