@inproceedings{61c7eb0869b04a9fb2d9a2412edeed76,
title = "Influence of fluorinated gate oxides on the low frequency noise of mos transistors under analog operation",
abstract = "The Ilf-noise amplitudes. of p- and nMOSFETs are investigated under biasing conditions relevant. for analog circuit operation. Significant improvement of the noise performance for both p- and n-MOSFETs was found by doping the gates of the devices with fluorine.",
author = "Ralf Brederlow and Werner Weber and Reinhard Jurk and Claus Dahe and Sylvia Kessee and J{\"u}rgen Holz and Wolfgang Sauert and Peter Klein and Bernd Lemaitre and Doris Schmitt-LandsiedeI and Roland Thewes",
year = "1998",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "472--475",
editor = "A. Touboul and Y. Danto and H. Grunbacher",
booktitle = "ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference",
note = "28th European Solid-State Device Research Conference, ESSDERC 1998 ; Conference date: 08-09-1998 Through 10-09-1998",
}