Influence of fluorinated gate oxides on the low frequency noise of mos transistors under analog operation

Ralf Brederlow, Werner Weber, Reinhard Jurk, Claus Dahe, Sylvia Kessee, Jürgen Holz, Wolfgang Sauert, Peter Klein, Bernd Lemaitre, Doris Schmitt-LandsiedeI, Roland Thewes

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

14 Scopus citations

Abstract

The Ilf-noise amplitudes. of p- and nMOSFETs are investigated under biasing conditions relevant. for analog circuit operation. Significant improvement of the noise performance for both p- and n-MOSFETs was found by doping the gates of the devices with fluorine.

Original languageEnglish
Title of host publicationESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference
EditorsA. Touboul, Y. Danto, H. Grunbacher
PublisherIEEE Computer Society
Pages472-475
Number of pages4
ISBN (Electronic)2863322346
StatePublished - 1998
Event28th European Solid-State Device Research Conference, ESSDERC 1998 - Bordeaux, France
Duration: 8 Sep 199810 Sep 1998

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference28th European Solid-State Device Research Conference, ESSDERC 1998
Country/TerritoryFrance
CityBordeaux
Period8/09/9810/09/98

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