Influence of crystal quality on the electronic properties of n-type 3C-SiC grown by low temperature low pressure chemical vapor deposition

The impact of crystal quality on the electronic properties of Cubic (3C)-SiC layers deposited by low-pressure chemical vapor deposition. Analysis by SEM, TEM, and SIMS shows an enhancement of the average oxygen concentration by almost two orders of magnitude and an accumulation of oxygen at crystal defects. The transition to nanocrystalline 3C-SiC results in a decrease of the carrier mobility and an increase of the residual carrier concentration in nominally undoped layers. The density and distribution of oxygen decorated defects are shown to be responsible for the increasing density of residual carriers in polycrystalline and nanocrystalline films.