Abstract
The effect of crystal defects on the piezoresistive properties of n-type 3C-SiC was investigated. An extended carrier-trapping model was developed for the quantitative assessment of the effect of the crystal defects. By taking the strain dependence of the tunneling current through potential barriers at internal boundaries into account, the piezoresistive gauge factor was modeled. the strain dependent conductivity of a single internal boundary was calculated as a function of temperature and carrier density.
| Original language | English |
|---|---|
| Pages (from-to) | 2878-2888 |
| Number of pages | 11 |
| Journal | Journal of Applied Physics |
| Volume | 96 |
| Issue number | 5 |
| DOIs | |
| State | Published - 1 Sep 2004 |