Influence of a thin AlAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots

M. Arzberger; U. Käsberger; G. Böhm; G. Abstreiter

doi:10.1063/1.125509

Influence of a thin AlAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots

M. Arzberger, U. Käsberger, G. Böhm, G. Abstreiter

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

90 Scopus citations

Abstract

The influence of an AlAs cap layer with a thickness of a few monolayers on the optical properties of molecular beam epitaxy-grown InAs/GaAs self-assembled quantum dots is investigated. The capping of the InAs islands with a thin AlAs layer before the overgrowth by GaAs leads to a blueshift of the photoluminescence at a substrate temperature T_s = 480°C, but to a significant redshift at T_s = 530°C. This indicates that the InAs/GaAs intermixing caused by In segregation at T_s = 530°C can be considerably reduced by a thin AlAs capping layer. This leads to deeper potential wells due to the higher In content in the quantum dots which results in a room-temperature photoluminescence at about 1.3 μm.

Original language	English
Pages (from-to)	3968-3970
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	25
DOIs	https://doi.org/10.1063/1.125509
State	Published - 20 Dec 1999

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10.1063/1.125509

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abstract = "The influence of an AlAs cap layer with a thickness of a few monolayers on the optical properties of molecular beam epitaxy-grown InAs/GaAs self-assembled quantum dots is investigated. The capping of the InAs islands with a thin AlAs layer before the overgrowth by GaAs leads to a blueshift of the photoluminescence at a substrate temperature Ts = 480°C, but to a significant redshift at Ts = 530°C. This indicates that the InAs/GaAs intermixing caused by In segregation at Ts = 530°C can be considerably reduced by a thin AlAs capping layer. This leads to deeper potential wells due to the higher In content in the quantum dots which results in a room-temperature photoluminescence at about 1.3 μm.",

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AU - Arzberger, M.

AU - Käsberger, U.

AU - Böhm, G.

AU - Abstreiter, G.

PY - 1999/12/20

Y1 - 1999/12/20

N2 - The influence of an AlAs cap layer with a thickness of a few monolayers on the optical properties of molecular beam epitaxy-grown InAs/GaAs self-assembled quantum dots is investigated. The capping of the InAs islands with a thin AlAs layer before the overgrowth by GaAs leads to a blueshift of the photoluminescence at a substrate temperature Ts = 480°C, but to a significant redshift at Ts = 530°C. This indicates that the InAs/GaAs intermixing caused by In segregation at Ts = 530°C can be considerably reduced by a thin AlAs capping layer. This leads to deeper potential wells due to the higher In content in the quantum dots which results in a room-temperature photoluminescence at about 1.3 μm.

AB - The influence of an AlAs cap layer with a thickness of a few monolayers on the optical properties of molecular beam epitaxy-grown InAs/GaAs self-assembled quantum dots is investigated. The capping of the InAs islands with a thin AlAs layer before the overgrowth by GaAs leads to a blueshift of the photoluminescence at a substrate temperature Ts = 480°C, but to a significant redshift at Ts = 530°C. This indicates that the InAs/GaAs intermixing caused by In segregation at Ts = 530°C can be considerably reduced by a thin AlAs capping layer. This leads to deeper potential wells due to the higher In content in the quantum dots which results in a room-temperature photoluminescence at about 1.3 μm.

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Influence of a thin AlAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots

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