Inelastic light scattering by phonons and electronic excitations in low-dimensional semiconductor structures

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Abstract

Various aspects of inelastic light scattering studies of low-dimensional semiconductor structures are discussed. This includes anisotropy of phonon dispersion in GaAs/AlAs superlattices, interface phonons in Si/Ge superlattices and electronic excitations in quantum wires and dots. Many of these studies require Raman scattering with high spatial resolution.

Original languageEnglish
Pages (from-to)193-200
Number of pages8
JournalJournal of Raman Spectroscopy
Volume27
Issue number3-4
DOIs
StatePublished - 1996

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