Inelastic light scattering by phonons and electronic excitations in low-dimensional semiconductor structures

Gerhard Abstreiter

doi:10.1002/(sici)1097-4555(199603)27:3/4<193::aid-jrs960>3.0.co;2-9

Inelastic light scattering by phonons and electronic excitations in low-dimensional semiconductor structures

Gerhard Abstreiter

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Various aspects of inelastic light scattering studies of low-dimensional semiconductor structures are discussed. This includes anisotropy of phonon dispersion in GaAs/AlAs superlattices, interface phonons in Si/Ge superlattices and electronic excitations in quantum wires and dots. Many of these studies require Raman scattering with high spatial resolution.

Original language	English
Pages (from-to)	193-200
Number of pages	8
Journal	Journal of Raman Spectroscopy
Volume	27
Issue number	3-4
DOIs	https://doi.org/10.1002/(sici)1097-4555(199603)27:3/4<193::aid-jrs960>3.0.co;2-9
State	Published - 1996

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10.1002/(sici)1097-4555(199603)27:3/4<193::aid-jrs960>3.0.co;2-9

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title = "Inelastic light scattering by phonons and electronic excitations in low-dimensional semiconductor structures",

abstract = "Various aspects of inelastic light scattering studies of low-dimensional semiconductor structures are discussed. This includes anisotropy of phonon dispersion in GaAs/AlAs superlattices, interface phonons in Si/Ge superlattices and electronic excitations in quantum wires and dots. Many of these studies require Raman scattering with high spatial resolution.",

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year = "1996",

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T1 - Inelastic light scattering by phonons and electronic excitations in low-dimensional semiconductor structures

AU - Abstreiter, Gerhard

PY - 1996

Y1 - 1996

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AB - Various aspects of inelastic light scattering studies of low-dimensional semiconductor structures are discussed. This includes anisotropy of phonon dispersion in GaAs/AlAs superlattices, interface phonons in Si/Ge superlattices and electronic excitations in quantum wires and dots. Many of these studies require Raman scattering with high spatial resolution.

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DO - 10.1002/(sici)1097-4555(199603)27:3/4<193::aid-jrs960>3.0.co;2-9

M3 - Article

AN - SCOPUS:2842590356

SN - 0377-0486

VL - 27

SP - 193

EP - 200

JO - Journal of Raman Spectroscopy

JF - Journal of Raman Spectroscopy

IS - 3-4

ER -

Inelastic light scattering by phonons and electronic excitations in low-dimensional semiconductor structures

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