TY - JOUR
T1 - Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes
AU - Kioupakis, Emmanouil
AU - Rinke, Patrick
AU - Delaney, Kris T.
AU - Van De Walle, Chris G.
PY - 2011/4/18
Y1 - 2011/4/18
N2 - InGaN-based light-emitting diodes (LEDs) exhibit a significant efficiency loss (droop) when operating at high injected carrier densities, the origin of which remains an open issue. Using atomistic first-principles calculations, we show that this efficiency droop is caused by indirect Auger recombination, mediated by electron-phonon coupling and alloy scattering. By identifying the origin of the droop, our results provide a guide to addressing the efficiency issues in nitride LEDs and the development of efficient solid-state lighting.
AB - InGaN-based light-emitting diodes (LEDs) exhibit a significant efficiency loss (droop) when operating at high injected carrier densities, the origin of which remains an open issue. Using atomistic first-principles calculations, we show that this efficiency droop is caused by indirect Auger recombination, mediated by electron-phonon coupling and alloy scattering. By identifying the origin of the droop, our results provide a guide to addressing the efficiency issues in nitride LEDs and the development of efficient solid-state lighting.
UR - http://www.scopus.com/inward/record.url?scp=79955380032&partnerID=8YFLogxK
U2 - 10.1063/1.3570656
DO - 10.1063/1.3570656
M3 - Article
AN - SCOPUS:79955380032
SN - 0003-6951
VL - 98
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 16
M1 - 161107
ER -