Increasing the breakdown capability of superjunction power MOSFETs at the edge of the active region

Norbert Reinelt, Markus Schmitt, Armin Willmeroth, Holger Kapels, Gerhard Wachutka

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

When superjunction power MOSFETs operate near the rim of the safe operating area, avalanche breakdown can occur in the transition region between the active cell array and the edge termination. Numerical device simulations confirmed this and revealed local charge imbalances, created by irregularities in the superjunction doping pattern, as major cause. Based on the simulation results, we proposed optimized transitions of the superjunction doping pattern from the active cell array to the edge termination. Numerical device simulations as well as experiments demonstrated the enhanced breakdown capability of these transition regions.

Original languageEnglish
Title of host publication2009 13th European Conference on Power Electronics and Applications, EPE '09
StatePublished - 2009
Event2009 13th European Conference on Power Electronics and Applications, EPE '09 - Barcelona, Spain
Duration: 8 Sep 200910 Sep 2009

Publication series

Name2009 13th European Conference on Power Electronics and Applications, EPE '09

Conference

Conference2009 13th European Conference on Power Electronics and Applications, EPE '09
Country/TerritorySpain
CityBarcelona
Period8/09/0910/09/09

Keywords

  • Measurement
  • Simulation
  • Super junction devices (CoolMOS)

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