TY - GEN
T1 - In situ measurement of aging-induced performance degradation in digital circuits
AU - Aryan, Nasim Pour
AU - Funke, Christian
AU - Barsfrede, Jens
AU - Yilniaz, Cenk
AU - Schmitt-Landsiedel, Doris
AU - Georsakos, Georg
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/7/22
Y1 - 2016/7/22
N2 - This paper presents a novel approach to evaluate the impact of aging mechanisms of digital circuits over their lifetimes, focusing on the analysis of measurement data. Aging of devices results in a performance reduction of digital circuits, which might result in timing violations and thus functional failure. To be able to evaluate the current timing behavior of circuits, their timing properties can be observed by in situ timing monitors. In this work, the timing slack of functional paths is extracted by in situ monitors and measured by a 5-bit time to digital converter (TDC) to accurately assess the reliability status of the circuit. Thus, aging induced performance degradation over lifetime can be monitored. By observing the timing properties of functional paths, intra-die variations of process, voltage, temperature and aging (PVTA) are monitored [1, 2]. Thus, an accurate assessment of the reliability status of the circuit is achieved.
AB - This paper presents a novel approach to evaluate the impact of aging mechanisms of digital circuits over their lifetimes, focusing on the analysis of measurement data. Aging of devices results in a performance reduction of digital circuits, which might result in timing violations and thus functional failure. To be able to evaluate the current timing behavior of circuits, their timing properties can be observed by in situ timing monitors. In this work, the timing slack of functional paths is extracted by in situ monitors and measured by a 5-bit time to digital converter (TDC) to accurately assess the reliability status of the circuit. Thus, aging induced performance degradation over lifetime can be monitored. By observing the timing properties of functional paths, intra-die variations of process, voltage, temperature and aging (PVTA) are monitored [1, 2]. Thus, an accurate assessment of the reliability status of the circuit is achieved.
UR - http://www.scopus.com/inward/record.url?scp=84991475468&partnerID=8YFLogxK
U2 - 10.1109/ETS.2016.7519285
DO - 10.1109/ETS.2016.7519285
M3 - Conference contribution
AN - SCOPUS:84991475468
T3 - Proceedings of the European Test Workshop
BT - Proceedings - 2016 21st IEEE European Test Symposium, ETS 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 21st IEEE European Test Symposium, ETS 2016
Y2 - 23 May 2016 through 26 May 2016
ER -