In situ investigation of band bending during formation of GaAs-Ge heterostructures

H. Brugger; F. Schäffler; G. Abstreiter

doi:10.1103/PhysRevLett.52.141

In situ investigation of band bending during formation of GaAs-Ge heterostructures

H. Brugger, F. Schäffler, G. Abstreiter

TUM Emeriti of Excellence

Technical University of Munich

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

Symmetry-forbidden phonon Raman scattering is used to investigate in situ the formation of GaAs-Ge heterojunctions. Under epitaxial growth conditions the band bending in GaAs induced by the first monolayers of Ge decreases strongly for thicker overlayers. For amorphous overlayers the Fermi level remains pinned around midgap. A simple model is presented which explains the observed behavior. The development of the Ge phonons demonstrates crystalline growth for substrate temperatures Tg>~300 K and amorphous growth for Tg=100 K.

Original language	English
Pages (from-to)	141-144
Number of pages	4
Journal	Physical Review Letters
Volume	52
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevLett.52.141
State	Published - 1984

Access to Document

10.1103/PhysRevLett.52.141

Cite this

@article{04d6754321e54478b781d236d1d7a92b,

title = "In situ investigation of band bending during formation of GaAs-Ge heterostructures",

abstract = "Symmetry-forbidden phonon Raman scattering is used to investigate in situ the formation of GaAs-Ge heterojunctions. Under epitaxial growth conditions the band bending in GaAs induced by the first monolayers of Ge decreases strongly for thicker overlayers. For amorphous overlayers the Fermi level remains pinned around midgap. A simple model is presented which explains the observed behavior. The development of the Ge phonons demonstrates crystalline growth for substrate temperatures Tg>~300 K and amorphous growth for Tg=100 K.",

author = "H. Brugger and F. Sch{\"a}ffler and G. Abstreiter",

year = "1984",

doi = "10.1103/PhysRevLett.52.141",

language = "English",

volume = "52",

pages = "141--144",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "2",

}

TY - JOUR

T1 - In situ investigation of band bending during formation of GaAs-Ge heterostructures

AU - Brugger, H.

AU - Schäffler, F.

AU - Abstreiter, G.

PY - 1984

Y1 - 1984

N2 - Symmetry-forbidden phonon Raman scattering is used to investigate in situ the formation of GaAs-Ge heterojunctions. Under epitaxial growth conditions the band bending in GaAs induced by the first monolayers of Ge decreases strongly for thicker overlayers. For amorphous overlayers the Fermi level remains pinned around midgap. A simple model is presented which explains the observed behavior. The development of the Ge phonons demonstrates crystalline growth for substrate temperatures Tg>~300 K and amorphous growth for Tg=100 K.

AB - Symmetry-forbidden phonon Raman scattering is used to investigate in situ the formation of GaAs-Ge heterojunctions. Under epitaxial growth conditions the band bending in GaAs induced by the first monolayers of Ge decreases strongly for thicker overlayers. For amorphous overlayers the Fermi level remains pinned around midgap. A simple model is presented which explains the observed behavior. The development of the Ge phonons demonstrates crystalline growth for substrate temperatures Tg>~300 K and amorphous growth for Tg=100 K.

UR - http://www.scopus.com/inward/record.url?scp=6244308808&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.52.141

DO - 10.1103/PhysRevLett.52.141

M3 - Article

AN - SCOPUS:6244308808

SN - 0031-9007

VL - 52

SP - 141

EP - 144

JO - Physical Review Letters

JF - Physical Review Letters

IS - 2

ER -

In situ investigation of band bending during formation of GaAs-Ge heterostructures

Abstract

Access to Document

Other files and links

Fingerprint

Cite this