Abstract
The authors introduce an in situ characterization method of resists used for electron-beam lithography. The technique is based on the application of an atomic force microscope, which is directly mounted below the cathode of an electron-beam lithography system. They demonstrate that patterns irradiated by the electron beam can be efficiently visualized and analyzed in surface topography directly after the electron-beam exposure. This in situ analysis takes place without any development or baking steps and gives access to the chemical (or latent) image of the irradiated resist.
Original language | English |
---|---|
Pages (from-to) | 802-805 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology B |
Volume | 28 |
Issue number | 4 |
DOIs | |
State | Published - 2010 |