In-situ characterization of MOCVD grown GaAs-and InP-based tunable VCSEL structures

Christian Grasse; Yuto Tomita; Peter Wiecha; Ralf Meyer; Tobias Grundl; Michael Muller; Markus Christian Amann

doi:10.1109/ICIPRM.2013.6562579

In-situ characterization of MOCVD grown GaAs-and InP-based tunable VCSEL structures

Christian Grasse
, Yuto Tomita
, Peter Wiecha
, Ralf Meyer
, Tobias Grundl
, Michael Muller
, Markus Christian Amann

Chair of Semiconductor Technology

Walter Schottky Institut
LayTec AG

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In-situ monitoring of growth parameters such as thickness and quality of InP and GaAs based materials is presented. This is a key technology for the fabrication of optoelectronic devices like VCSELs.

Original language	English
Title of host publication	2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013
DOIs	https://doi.org/10.1109/ICIPRM.2013.6562579
State	Published - 2013
Event	2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013 - Kobe, Japan Duration: 19 May 2013 → 23 May 2013

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)	1092-8669

Conference

Conference	2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013
Country/Territory	Japan
City	Kobe
Period	19/05/13 → 23/05/13

Keywords

GaAs
InP
MOCVD
VCSEL
in-situ monitoring

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10.1109/ICIPRM.2013.6562579

Cite this

Grasse, C., Tomita, Y., Wiecha, P., Meyer, R., Grundl, T., Muller, M., & Amann, M. C. (2013). In-situ characterization of MOCVD grown GaAs-and InP-based tunable VCSEL structures. In 2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013 Article 6562579 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2013.6562579

@inproceedings{529dde9a163048b9a320cfbdb1315e90,

title = "In-situ characterization of MOCVD grown GaAs-and InP-based tunable VCSEL structures",

abstract = "In-situ monitoring of growth parameters such as thickness and quality of InP and GaAs based materials is presented. This is a key technology for the fabrication of optoelectronic devices like VCSELs.",

keywords = "GaAs, InP, MOCVD, VCSEL, in-situ monitoring",

author = "Christian Grasse and Yuto Tomita and Peter Wiecha and Ralf Meyer and Tobias Grundl and Michael Muller and Amann, \{Markus Christian\}",

year = "2013",

doi = "10.1109/ICIPRM.2013.6562579",

language = "English",

isbn = "9781467361309",

series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

booktitle = "2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013",

note = "2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013 ; Conference date: 19-05-2013 Through 23-05-2013",

}

Grasse, C, Tomita, Y, Wiecha, P, Meyer, R, Grundl, T, Muller, M & Amann, MC 2013, In-situ characterization of MOCVD grown GaAs-and InP-based tunable VCSEL structures. in 2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013., 6562579, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013, Kobe, Japan, 19/05/13. https://doi.org/10.1109/ICIPRM.2013.6562579

In-situ characterization of MOCVD grown GaAs-and InP-based tunable VCSEL structures. / Grasse, Christian; Tomita, Yuto; Wiecha, Peter et al.
2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013. 2013. 6562579 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - In-situ characterization of MOCVD grown GaAs-and InP-based tunable VCSEL structures

AU - Grasse, Christian

AU - Tomita, Yuto

AU - Wiecha, Peter

AU - Meyer, Ralf

AU - Grundl, Tobias

AU - Muller, Michael

AU - Amann, Markus Christian

PY - 2013

Y1 - 2013

N2 - In-situ monitoring of growth parameters such as thickness and quality of InP and GaAs based materials is presented. This is a key technology for the fabrication of optoelectronic devices like VCSELs.

AB - In-situ monitoring of growth parameters such as thickness and quality of InP and GaAs based materials is presented. This is a key technology for the fabrication of optoelectronic devices like VCSELs.

KW - GaAs

KW - InP

KW - MOCVD

KW - VCSEL

KW - in-situ monitoring

UR - https://www.scopus.com/pages/publications/84882345811

U2 - 10.1109/ICIPRM.2013.6562579

DO - 10.1109/ICIPRM.2013.6562579

M3 - Conference contribution

AN - SCOPUS:84882345811

SN - 9781467361309

T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

BT - 2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013

T2 - 2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013

Y2 - 19 May 2013 through 23 May 2013

ER -

Grasse C, Tomita Y, Wiecha P, Meyer R, Grundl T, Muller M et al. In-situ characterization of MOCVD grown GaAs-and InP-based tunable VCSEL structures. In 2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013. 2013. 6562579. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). doi: 10.1109/ICIPRM.2013.6562579

In-situ characterization of MOCVD grown GaAs-and InP-based tunable VCSEL structures

Abstract

Publication series

Conference

Keywords

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