In situ characterization of Ge nanocrystals near the growth temperature

I. D. Sharp, Q. Xu, D. O. Yi, C. Y. Liao, J. W. Beeman, Z. Liliental-Weber, K. M. Yu, D. N. Zakharov, J. W. Ager, D. C. Chrzan, E. E. Haller

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We present in situ electron diffraction data indicating that Ge nanocrystals embedded in a silica matrix can be solid at temperatures exceeding the bulk Ge melting point. Supercooling is observed when returning from temperatures above the melting point of the Ge nanocrystals. Since melting point hysteresis is observed, it is not clear if nanoclusters are solid or liquid during the initial growth process. Raman spectra of as-grown nanocrystals give a measure of compressive stress and in-situ Raman spectroscopy further confirms the presence of crystalline Ge above 800 °C.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages611-612
Number of pages2
DOIs
StatePublished - 30 Jun 2005
Externally publishedYes
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: 26 Jul 200430 Jul 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferencePHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/TerritoryUnited States
CityFlagstaff, AZ
Period26/07/0430/07/04

Fingerprint

Dive into the research topics of 'In situ characterization of Ge nanocrystals near the growth temperature'. Together they form a unique fingerprint.

Cite this