Improvement of the photoelectric properties of amorphous SiCx:H by using disilylmethane as a feeding gas

W. Beyer; R. Hager; H. Schmidbaur; G. Winterling

doi:10.1063/1.101412

Improvement of the photoelectric properties of amorphous SiC_x:H by using disilylmethane as a feeding gas

W. Beyer
, R. Hager
, H. Schmidbaur
, G. Winterling

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

Amorphous (a-) SiC_x:H films were deposited in a rf glow discharge of disilylmethane/silane mixtures. At optical gaps larger than 2 eV these films are found to have a higher photoconductivity than films prepared in conventional CH₄/SiH₄ gas mixtures. Both types of films are compared with respect to their hydrogen content as well as infrared and effusion spectra.

Original language	English
Pages (from-to)	1666-1668
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	17
DOIs	https://doi.org/10.1063/1.101412
State	Published - 1989

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title = "Improvement of the photoelectric properties of amorphous SiCx:H by using disilylmethane as a feeding gas",

abstract = "Amorphous (a-) SiCx:H films were deposited in a rf glow discharge of disilylmethane/silane mixtures. At optical gaps larger than 2 eV these films are found to have a higher photoconductivity than films prepared in conventional CH4/SiH4 gas mixtures. Both types of films are compared with respect to their hydrogen content as well as infrared and effusion spectra.",

author = "W. Beyer and R. Hager and H. Schmidbaur and G. Winterling",

year = "1989",

doi = "10.1063/1.101412",

language = "English",

volume = "54",

pages = "1666--1668",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Improvement of the photoelectric properties of amorphous SiCx:H by using disilylmethane as a feeding gas

AU - Beyer, W.

AU - Hager, R.

AU - Schmidbaur, H.

AU - Winterling, G.

PY - 1989

Y1 - 1989

N2 - Amorphous (a-) SiCx:H films were deposited in a rf glow discharge of disilylmethane/silane mixtures. At optical gaps larger than 2 eV these films are found to have a higher photoconductivity than films prepared in conventional CH4/SiH4 gas mixtures. Both types of films are compared with respect to their hydrogen content as well as infrared and effusion spectra.

AB - Amorphous (a-) SiCx:H films were deposited in a rf glow discharge of disilylmethane/silane mixtures. At optical gaps larger than 2 eV these films are found to have a higher photoconductivity than films prepared in conventional CH4/SiH4 gas mixtures. Both types of films are compared with respect to their hydrogen content as well as infrared and effusion spectra.

UR - https://www.scopus.com/pages/publications/0000061696

U2 - 10.1063/1.101412

DO - 10.1063/1.101412

M3 - Article

AN - SCOPUS:0000061696

SN - 0003-6951

VL - 54

SP - 1666

EP - 1668

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Improvement of the photoelectric properties of amorphous SiC_x:H by using disilylmethane as a feeding gas

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