Improvement of the photoelectric properties of amorphous SiCx:H by using disilylmethane as a feeding gas

W. Beyer, R. Hager, H. Schmidbaur, G. Winterling

Research output: Contribution to journalArticlepeer-review

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Abstract

Amorphous (a-) SiCx:H films were deposited in a rf glow discharge of disilylmethane/silane mixtures. At optical gaps larger than 2 eV these films are found to have a higher photoconductivity than films prepared in conventional CH4/SiH4 gas mixtures. Both types of films are compared with respect to their hydrogen content as well as infrared and effusion spectra.

Original languageEnglish
Pages (from-to)1666-1668
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number17
DOIs
StatePublished - 1989
Externally publishedYes

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