Improved step flow model for simulation of orientation-dependent wet etching of silicon

A. Horn, G. Wachutka

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We demonstrate a simulation tool for orientation-dependent wet chemical etching of silicon, which is able to correctly reproduce the detailed shape and morphology of the etch front. In previous work we investigated the capabilities of our simulation approach by the analysis of etch mask compensation structures featuring mask edges which were aligned precisely along the principal crystal directions. Recently we extended our simulation approach to the analysis of arbitrarily shaped mask geometries and misaligned mask edges. Now our simulation approach provides a solid basis for the predictive simulation of progressively complex MEMS structures.

Original languageEnglish
Title of host publicationTRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1663-1666
Number of pages4
ISBN (Electronic)0780377311, 9780780377318
DOIs
StatePublished - 2003
Event12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers - Boston, United States
Duration: 8 Jun 200312 Jun 2003

Publication series

NameTRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers
Volume2

Conference

Conference12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers
Country/TerritoryUnited States
CityBoston
Period8/06/0312/06/03

Keywords

  • Analytical models
  • Chemicals
  • Geometry
  • Micromechanical devices
  • Morphology
  • Predictive models
  • Shape
  • Silicon
  • Solid modeling
  • Wet etching

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