Abstract
We have developed an improved waveguide design for 10.6 μm (Al)GaAs quantum cascade lasers based on a large optical cavity. With the optical confinement based on the free-carrier plasma effect we accurately evaluate the complex dielectric constant as a function of doping densities of the GaAs waveguide layers. Free-carrier absorption losses and confinement factors are simulated and compared with experimental results. An improved design was obtained by varying the doping profile of the large optical cavity resulting in a 30% reduced threshold current density of 3.4 kA cm-2 at 77 K heatsink temperature.
Original language | English |
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Pages (from-to) | 844-847 |
Number of pages | 4 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 13 |
Issue number | 2-4 |
DOIs | |
State | Published - Mar 2002 |
Keywords
- Infrared
- Intersubband
- Quantum cascade laser