Improved aluminum nitride thin films grown by MOCVD from tritertiarybutylaluminum and ammonia

Keyphrases

• Ammonia 100%
• Metal-organic Chemical Vapor Deposition (MOCVD) 100%
• Aluminum Nitride Thin Film 100%
• Layer Thickness 66%
• Biaxial 66%
• Compressive Stress 66%
• GaN Layers 66%
• AlN Thin Film 66%
• AlN Layer 66%
• Pressure Dependence 33%
• Atomic Force Microscopy 33%
• Structural Properties 33%
• Optical Properties 33%
• Epitaxial Film 33%
• Photoluminescence 33%
• X-ray Diffraction Measurement 33%
• Epitaxial 33%
• Full Width at Half Maximum 33%
• Sapphire 33%
• Micro-Raman 33%
• Coefficient of Thermal Expansion 33%
• Structural Disorder 33%
• X-ray Rocking Curve 33%
• Edge Dislocation 33%
• Photothermal Deflection Spectroscopy 33%
• Asymmetric Reflection 33%
• Band Gap Shift 33%
• C-plane 33%
• AlN/GaN Heterostructure 33%

Material Science

• Aluminum Nitride 100%
• Thin Films 100%
• Film 14%
• Chemical Vapor Deposition 14%
• X-Ray Diffraction 14%
• Heterojunction 14%
• Photoluminescence 14%
• Diffraction Measurement 14%
• Thermal Expansion 14%
• Sapphire 14%
• Structural Property 14%
• Metal-Organic Chemical Vapor Deposition 14%
• X-Ray Diffractogram 14%
• Epitaxial Film 14%
• Edge Dislocation 14%
• Atomic Force Microscopy 14%