Improved aluminum nitride thin films grown by MOCVD from tritertiarybutylaluminum and ammonia

AlN thin films were grown on c-plane sapphire by metalorganic chemical vapor deposition from tritertiarybutylaluminum and ammonia at 1050 °C. These films exhibit a full width at half maximum of the 002 X-ray rocking curve below 200 arcsec indicating high epitaxial quality. By measuring asymmetric reflections, a structural disorder of the lattice mainly due to edge dislocations can be observed. For further investigations, atomic force microscopy and photothermal deflection spectroscopy were performed. In order to study the effect of increasing AlN layer thickness on the optical and structural properties of GaN in an AlN/GaN heterostructure, AlN thin films with increasing thickness ranging from 0.02 to 0.36 μm were used as sublayers for the deposition of 0.75 μm thick GaN layers. Photoluminescence, micro-Raman and X-ray diffraction measurements confirm the relaxation of biaxial compressive stress in the GaN layers due to different thermal expansion coefficients by increasing AlN layer thickness. The pressure dependence of the band gap shift was determined as 24 meV/GPa for biaxial compressive stress. Our results indicate that the growth of AlN with metal organic chemical vapor deposition from tritertiarybutylaluminum and ammonia is a promising method for obtaining high quality epitaxial films.