Abstract
Steady-state and transient self-heating effects as well as the electro-thermal coupling in VLSI MOST were investigated experimentally and theoretically.Local and time dependent temperature peaks were observed.The MOS devices operate in nonisothermal conditions.This leads to drifting operating conditions as well as to mismatch and coupling effects in IC operation.
| Original language | English |
|---|---|
| Pages | 50-55 |
| Number of pages | 6 |
| DOIs | |
| State | Published - 1 Feb 1988 |
| Externally published | Yes |
| Event | 1988 IEEE International Conference on Microelectronic Test Structures, ICMTS 1988 - Long Beach, United States Duration: 22 Feb 1988 → 23 Feb 1988 |
Conference
| Conference | 1988 IEEE International Conference on Microelectronic Test Structures, ICMTS 1988 |
|---|---|
| Country/Territory | United States |
| City | Long Beach |
| Period | 22/02/88 → 23/02/88 |
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