Impact of the self-heating effect on circuit performance estimation using DC model parameters

D. Takacs, J. Trager, D. Schmitt-Landsiedel

Research output: Contribution to conferencePaperpeer-review

Abstract

Steady-state and transient self-heating effects as well as the electro-thermal coupling in VLSI MOST were investigated experimentally and theoretically.Local and time dependent temperature peaks were observed.The MOS devices operate in nonisothermal conditions.This leads to drifting operating conditions as well as to mismatch and coupling effects in IC operation.

Original languageEnglish
Pages50-55
Number of pages6
DOIs
StatePublished - 1 Feb 1988
Externally publishedYes
Event1988 IEEE International Conference on Microelectronic Test Structures, ICMTS 1988 - Long Beach, United States
Duration: 22 Feb 198823 Feb 1988

Conference

Conference1988 IEEE International Conference on Microelectronic Test Structures, ICMTS 1988
Country/TerritoryUnited States
CityLong Beach
Period22/02/8823/02/88

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