Impact of STI-induced stress, inverse narrow width effect, and statistical VTH variations on leakage currents in 120 nm CMOS

Christian Pacha; Martin Bach; Klaus Von Arnim; Ralf Brederlow; Doris Schmitt-Landsiede; Peter Seegebrecht; Jörg Berthold; Roland Thewes

Impact of STI-induced stress, inverse narrow width effect, and statistical V_TH variations on leakage currents in 120 nm CMOS

Christian Pacha, Martin Bach, Klaus Von Arnim, Ralf Brederlow, Doris Schmitt-Landsiede, Peter Seegebrecht, Jörg Berthold, Roland Thewes

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

50 Scopus citations

Abstract

Leakage currents in 120 nm CMOS technology are depending on STI-induced Stress (STIS), Inverse Narrow-Width Effect (INWE), and statistical threshold voltage variations. In this paper we analyze the impact of theses effects on the gate-width dependence of the device off-current density. A threshold voltage model is proposed to describe the observed off-current minimum. STIS dominates the device behavior for large gate widths while INWE determines the off-current for gate widths below I jum. Statistical threshold voltage variations are relevant for minimum-sized devices.

Original language	English
Title of host publication	ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference
Editors	R.P. Mertens, C.L. Claeys
Pages	397-400
Number of pages	4
State	Published - 2004
Externally published	Yes
Event	ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference - Leuven, Belgium Duration: 21 Sep 2004 → 23 Sep 2004

Publication series

Name	ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference

Conference

Conference	ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference
Country/Territory	Belgium
City	Leuven
Period	21/09/04 → 23/09/04

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Pacha, C., Bach, M., Von Arnim, K., Brederlow, R., Schmitt-Landsiede, D., Seegebrecht, P., Berthold, J., & Thewes, R. (2004). Impact of STI-induced stress, inverse narrow width effect, and statistical V_TH variations on leakage currents in 120 nm CMOS. In R. P. Mertens, & C. L. Claeys (Eds.), ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference (pp. 397-400). (ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference).

Pacha, Christian ; Bach, Martin ; Von Arnim, Klaus et al. / Impact of STI-induced stress, inverse narrow width effect, and statistical V_TH variations on leakage currents in 120 nm CMOS. ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference. editor / R.P. Mertens ; C.L. Claeys. 2004. pp. 397-400 (ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference).

@inproceedings{c838a76637d844059344481c8930cb93,

title = "Impact of STI-induced stress, inverse narrow width effect, and statistical VTH variations on leakage currents in 120 nm CMOS",

abstract = "Leakage currents in 120 nm CMOS technology are depending on STI-induced Stress (STIS), Inverse Narrow-Width Effect (INWE), and statistical threshold voltage variations. In this paper we analyze the impact of theses effects on the gate-width dependence of the device off-current density. A threshold voltage model is proposed to describe the observed off-current minimum. STIS dominates the device behavior for large gate widths while INWE determines the off-current for gate widths below I jum. Statistical threshold voltage variations are relevant for minimum-sized devices.",

author = "Christian Pacha and Martin Bach and {Von Arnim}, Klaus and Ralf Brederlow and Doris Schmitt-Landsiede and Peter Seegebrecht and J{\"o}rg Berthold and Roland Thewes",

year = "2004",

language = "English",

isbn = "0780384784",

series = "ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference",

pages = "397--400",

editor = "R.P. Mertens and C.L. Claeys",

booktitle = "ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference",

note = "ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference ; Conference date: 21-09-2004 Through 23-09-2004",

}

Pacha, C, Bach, M, Von Arnim, K, Brederlow, R, Schmitt-Landsiede, D, Seegebrecht, P, Berthold, J & Thewes, R 2004, Impact of STI-induced stress, inverse narrow width effect, and statistical V_TH variations on leakage currents in 120 nm CMOS. in RP Mertens & CL Claeys (eds), ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference. ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference, pp. 397-400, ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference, Leuven, Belgium, 21/09/04.

Impact of STI-induced stress, inverse narrow width effect, and statistical V_TH variations on leakage currents in 120 nm CMOS. / Pacha, Christian; Bach, Martin; Von Arnim, Klaus et al.
ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference. ed. / R.P. Mertens; C.L. Claeys. 2004. p. 397-400 (ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Impact of STI-induced stress, inverse narrow width effect, and statistical VTH variations on leakage currents in 120 nm CMOS

AU - Pacha, Christian

AU - Bach, Martin

AU - Von Arnim, Klaus

AU - Brederlow, Ralf

AU - Schmitt-Landsiede, Doris

AU - Seegebrecht, Peter

AU - Berthold, Jörg

AU - Thewes, Roland

PY - 2004

Y1 - 2004

N2 - Leakage currents in 120 nm CMOS technology are depending on STI-induced Stress (STIS), Inverse Narrow-Width Effect (INWE), and statistical threshold voltage variations. In this paper we analyze the impact of theses effects on the gate-width dependence of the device off-current density. A threshold voltage model is proposed to describe the observed off-current minimum. STIS dominates the device behavior for large gate widths while INWE determines the off-current for gate widths below I jum. Statistical threshold voltage variations are relevant for minimum-sized devices.

AB - Leakage currents in 120 nm CMOS technology are depending on STI-induced Stress (STIS), Inverse Narrow-Width Effect (INWE), and statistical threshold voltage variations. In this paper we analyze the impact of theses effects on the gate-width dependence of the device off-current density. A threshold voltage model is proposed to describe the observed off-current minimum. STIS dominates the device behavior for large gate widths while INWE determines the off-current for gate widths below I jum. Statistical threshold voltage variations are relevant for minimum-sized devices.

UR - http://www.scopus.com/inward/record.url?scp=17644376246&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:17644376246

SN - 0780384784

T3 - ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference

SP - 397

EP - 400

BT - ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference

A2 - Mertens, R.P.

A2 - Claeys, C.L.

T2 - ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference

Y2 - 21 September 2004 through 23 September 2004

ER -

Pacha C, Bach M, Von Arnim K, Brederlow R, Schmitt-Landsiede D, Seegebrecht P et al. Impact of STI-induced stress, inverse narrow width effect, and statistical V_TH variations on leakage currents in 120 nm CMOS. In Mertens RP, Claeys CL, editors, ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference. 2004. p. 397-400. (ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference).

Impact of STI-induced stress, inverse narrow width effect, and statistical V_TH variations on leakage currents in 120 nm CMOS

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