Impact of High Sc Content on Crystal Morphology and RF Performance of Sputtered Al1-xScxN SMR BAW

Andreas Bogner, Hans Jorg Timme, Rudiger Bauder, Angelika Mutzbauer, Diana Pichler, Michael Krenzer, Christian Reccius, Robert Weigel, Amelie Hagelauer

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

18 Scopus citations

Abstract

Applications using BAW devices benefit from large intrinsic electromechanical coupling materials, e.g. Al1-xScxN. This work reports BAW-SMRs using high piezoelectric Al1-xScxN and investigates the relations between Sc content, crystal morphology and resonator RF performance. Finally, key requirements for high quality Al1-xScxN thin-film growth are analyzed and discussed examplary for x = 20at.-%.

Original languageEnglish
Title of host publication2019 IEEE International Ultrasonics Symposium, IUS 2019
PublisherIEEE Computer Society
Pages706-709
Number of pages4
ISBN (Electronic)9781728145969
DOIs
StatePublished - Oct 2019
Externally publishedYes
Event2019 IEEE International Ultrasonics Symposium, IUS 2019 - Glasgow, United Kingdom
Duration: 6 Oct 20199 Oct 2019

Publication series

NameIEEE International Ultrasonics Symposium, IUS
Volume2019-October
ISSN (Print)1948-5719
ISSN (Electronic)1948-5727

Conference

Conference2019 IEEE International Ultrasonics Symposium, IUS 2019
Country/TerritoryUnited Kingdom
CityGlasgow
Period6/10/199/10/19

Keywords

  • AlScN
  • BAW resonator
  • BAW-SMR
  • thin-film growth

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