Impact of circuit carrier technologies on MHz-switching of GaN half-bridge circuits

Norbert Seliger; Franz Stubenrauch; Christian Brendel; Doris Schmitt-Landsiedel

doi:10.1109/SBMicro.2017.7990867

Impact of circuit carrier technologies on MHz-switching of GaN half-bridge circuits

Norbert Seliger
, Franz Stubenrauch
, Christian Brendel
, Doris Schmitt-Landsiedel

Medicine and Health

Hochschule Rosenheim, University of Applied Sciences
Dr Johannes Heidenhain GmbH

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

Increasing the switching frequency has been one of the most beneficial advancements in modern power electronics. This trend has been enabled by progress in power semiconductors resulting in increased power densities, efficiencies and control dynamics. The aim of this study is to analyze the influence of three different circuit carrier technologies on switching power loss of 650V hardswitching GaN devices. Limitations and solutions for half-bridge circuits operating at MHz-switching are investigated by modeling and experiments on a prototype.

Original language	English
Title of host publication	PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9783800744244
DOIs	https://doi.org/10.1109/SBMicro.2017.7990867
State	Published - 2017
Event	2017 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2017 - Nuremberg, Germany Duration: 16 May 2017 → 18 May 2017

Publication series

Name	PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management

Conference

Conference	2017 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2017
Country/Territory	Germany
City	Nuremberg
Period	16/05/17 → 18/05/17

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1109/SBMicro.2017.7990867

Cite this

Seliger, N., Stubenrauch, F., Brendel, C., & Schmitt-Landsiedel, D. (2017). Impact of circuit carrier technologies on MHz-switching of GaN half-bridge circuits. In PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management Article 7990867 (PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SBMicro.2017.7990867

Seliger, Norbert ; Stubenrauch, Franz ; Brendel, Christian et al. / Impact of circuit carrier technologies on MHz-switching of GaN half-bridge circuits. PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Institute of Electrical and Electronics Engineers Inc., 2017. (PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management).

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title = "Impact of circuit carrier technologies on MHz-switching of GaN half-bridge circuits",

abstract = "Increasing the switching frequency has been one of the most beneficial advancements in modern power electronics. This trend has been enabled by progress in power semiconductors resulting in increased power densities, efficiencies and control dynamics. The aim of this study is to analyze the influence of three different circuit carrier technologies on switching power loss of 650V hardswitching GaN devices. Limitations and solutions for half-bridge circuits operating at MHz-switching are investigated by modeling and experiments on a prototype.",

author = "Norbert Seliger and Franz Stubenrauch and Christian Brendel and Doris Schmitt-Landsiedel",

note = "Publisher Copyright: {\textcopyright} VDE VERLAG GMBH · Berlin · Offenbach.; 2017 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2017 ; Conference date: 16-05-2017 Through 18-05-2017",

year = "2017",

doi = "10.1109/SBMicro.2017.7990867",

language = "English",

series = "PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management",

}

Seliger, N, Stubenrauch, F, Brendel, C & Schmitt-Landsiedel, D 2017, Impact of circuit carrier technologies on MHz-switching of GaN half-bridge circuits. in PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management., 7990867, PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Institute of Electrical and Electronics Engineers Inc., 2017 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2017, Nuremberg, Germany, 16/05/17. https://doi.org/10.1109/SBMicro.2017.7990867

Impact of circuit carrier technologies on MHz-switching of GaN half-bridge circuits. / Seliger, Norbert; Stubenrauch, Franz; Brendel, Christian et al.
PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Institute of Electrical and Electronics Engineers Inc., 2017. 7990867 (PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Impact of circuit carrier technologies on MHz-switching of GaN half-bridge circuits

AU - Seliger, Norbert

AU - Stubenrauch, Franz

AU - Brendel, Christian

AU - Schmitt-Landsiedel, Doris

PY - 2017

Y1 - 2017

N2 - Increasing the switching frequency has been one of the most beneficial advancements in modern power electronics. This trend has been enabled by progress in power semiconductors resulting in increased power densities, efficiencies and control dynamics. The aim of this study is to analyze the influence of three different circuit carrier technologies on switching power loss of 650V hardswitching GaN devices. Limitations and solutions for half-bridge circuits operating at MHz-switching are investigated by modeling and experiments on a prototype.

AB - Increasing the switching frequency has been one of the most beneficial advancements in modern power electronics. This trend has been enabled by progress in power semiconductors resulting in increased power densities, efficiencies and control dynamics. The aim of this study is to analyze the influence of three different circuit carrier technologies on switching power loss of 650V hardswitching GaN devices. Limitations and solutions for half-bridge circuits operating at MHz-switching are investigated by modeling and experiments on a prototype.

UR - https://www.scopus.com/pages/publications/85040606588

U2 - 10.1109/SBMicro.2017.7990867

DO - 10.1109/SBMicro.2017.7990867

M3 - Conference contribution

AN - SCOPUS:85040606588

T3 - PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management

BT - PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2017 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2017

Y2 - 16 May 2017 through 18 May 2017

ER -

Seliger N, Stubenrauch F, Brendel C, Schmitt-Landsiedel D. Impact of circuit carrier technologies on MHz-switching of GaN half-bridge circuits. In PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Institute of Electrical and Electronics Engineers Inc. 2017. 7990867. (PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management). doi: 10.1109/SBMicro.2017.7990867

Impact of circuit carrier technologies on MHz-switching of GaN half-bridge circuits

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