TY - GEN
T1 - III-V-on-CMOS Devices and Circuits
T2 - 65th Annual IEEE International Electron Devices Meeting, IEDM 2019
AU - Zota, C. B.
AU - Morf, T.
AU - Muller, P.
AU - Convertino, C.
AU - Filipp, S.
AU - Riess, W.
AU - Czornomaz, L.
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/12
Y1 - 2019/12
N2 - In this work, we present a sequentially 3D integrated III-V-on-CMOS RF MOSFET technology with state-of-the-art RF performance. This platform is particularly promising for cryogenic applications where cooling power and space is limited, as the III-V devices offer reduced power dissipation while the 3D architecture enables small form-factors and reduced latencies. The unique features of III-V materials also enable novel devices. Here, we propose and show key experimental results of a quantized LNA, a cryogenic III-V nanowire amplifier that can significantly outperform standard HEMT technology. As heat dissipation is a key limitation in 3D architectures, we explore self-heating effects in CMOS using integrated temperature sensors. These results show the promise of III-V-on-CMOS for cryogenic applications such as integrated electronics for HPC, quantum computing and space.
AB - In this work, we present a sequentially 3D integrated III-V-on-CMOS RF MOSFET technology with state-of-the-art RF performance. This platform is particularly promising for cryogenic applications where cooling power and space is limited, as the III-V devices offer reduced power dissipation while the 3D architecture enables small form-factors and reduced latencies. The unique features of III-V materials also enable novel devices. Here, we propose and show key experimental results of a quantized LNA, a cryogenic III-V nanowire amplifier that can significantly outperform standard HEMT technology. As heat dissipation is a key limitation in 3D architectures, we explore self-heating effects in CMOS using integrated temperature sensors. These results show the promise of III-V-on-CMOS for cryogenic applications such as integrated electronics for HPC, quantum computing and space.
UR - http://www.scopus.com/inward/record.url?scp=85081059376&partnerID=8YFLogxK
U2 - 10.1109/IEDM19573.2019.8993505
DO - 10.1109/IEDM19573.2019.8993505
M3 - Conference contribution
AN - SCOPUS:85081059376
T3 - Technical Digest - International Electron Devices Meeting, IEDM
BT - 2019 IEEE International Electron Devices Meeting, IEDM 2019
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 7 December 2019 through 11 December 2019
ER -