Hyperfine studies of dangling bonds in amorphous silicon

David K. Biegelsen, Martin Stutzmann

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Dangling-bond electron-spin hyperfine spectra have been measured in dilute29 and enriched29 a-Si:H. From the data we deduce that the electron wave function is largely p-like and has 5080 % of its density on the central atom with the remainder predominantly on at least one of the back-bonded neighbors. A significant degree of weak back bonding for most dangling-bond sites is invoked to explain the large hyperfine coupling to a back-atom nucleus. Hydrogen back bonding at the dangling-bond site is shown to be negligible.

Original languageEnglish
Pages (from-to)3006-3011
Number of pages6
JournalPhysical Review B
Issue number5
StatePublished - 1986
Externally publishedYes


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