Hydrogen response mechanism of Pt-GaN Schottky diodes

J. Schalwig; G. Müller; U. Karrer; M. Eickhoff; O. Ambacher; M. Stutzmann; L. Görgens; G. Dollinger

doi:10.1063/1.1450044

Hydrogen response mechanism of Pt-GaN Schottky diodes

J. Schalwig, G. Müller, U. Karrer, M. Eickhoff, O. Ambacher, M. Stutzmann, L. Görgens, G. Dollinger

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

204 Scopus citations

Abstract

Besides silicon carbide, group-III nitrides are also suitable large-band-gap semiconductor materials for high-temperature gas sensor devices. Exposing GaN-based Schottky diodes with catalytically active platinum electrodes to hydrogen, we observed a decrease of the rectifying characteristics which we attribute to a decrease in Schottky barrier height. Current-voltage and elastic recoil detection measurements were used to investigate the H-sensing behavior of such devices. Our results indicate an interfacial effect as the origin of the sensor response to hydrogen.

Original language	English
Pages (from-to)	1222-1224
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	7
DOIs	https://doi.org/10.1063/1.1450044
State	Published - 18 Feb 2002

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title = "Hydrogen response mechanism of Pt-GaN Schottky diodes",

abstract = "Besides silicon carbide, group-III nitrides are also suitable large-band-gap semiconductor materials for high-temperature gas sensor devices. Exposing GaN-based Schottky diodes with catalytically active platinum electrodes to hydrogen, we observed a decrease of the rectifying characteristics which we attribute to a decrease in Schottky barrier height. Current-voltage and elastic recoil detection measurements were used to investigate the H-sensing behavior of such devices. Our results indicate an interfacial effect as the origin of the sensor response to hydrogen.",

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T1 - Hydrogen response mechanism of Pt-GaN Schottky diodes

AU - Schalwig, J.

AU - Müller, G.

AU - Karrer, U.

AU - Eickhoff, M.

AU - Ambacher, O.

AU - Stutzmann, M.

AU - Görgens, L.

AU - Dollinger, G.

PY - 2002/2/18

Y1 - 2002/2/18

N2 - Besides silicon carbide, group-III nitrides are also suitable large-band-gap semiconductor materials for high-temperature gas sensor devices. Exposing GaN-based Schottky diodes with catalytically active platinum electrodes to hydrogen, we observed a decrease of the rectifying characteristics which we attribute to a decrease in Schottky barrier height. Current-voltage and elastic recoil detection measurements were used to investigate the H-sensing behavior of such devices. Our results indicate an interfacial effect as the origin of the sensor response to hydrogen.

AB - Besides silicon carbide, group-III nitrides are also suitable large-band-gap semiconductor materials for high-temperature gas sensor devices. Exposing GaN-based Schottky diodes with catalytically active platinum electrodes to hydrogen, we observed a decrease of the rectifying characteristics which we attribute to a decrease in Schottky barrier height. Current-voltage and elastic recoil detection measurements were used to investigate the H-sensing behavior of such devices. Our results indicate an interfacial effect as the origin of the sensor response to hydrogen.

UR - http://www.scopus.com/inward/record.url?scp=79956017759&partnerID=8YFLogxK

U2 - 10.1063/1.1450044

DO - 10.1063/1.1450044

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VL - 80

SP - 1222

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Hydrogen response mechanism of Pt-GaN Schottky diodes

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