Hydrogen passivation and reactivation of shallow Zn acceptors in GaAs

A. W.R. Leitch; Th Prescha; M. Stutzmann

doi:10.1016/0169-4332(91)90204-W

Hydrogen passivation and reactivation of shallow Zn acceptors in GaAs

A. W.R. Leitch, Th Prescha, M. Stutzmann

Max Planck Institute for Solid State Research

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We report on a study of the hydrogenation of melt-grown Zn-doped GaAs, using a remote DC plasma system. Depth profiles of the free carrier concentration revealed the extent of passivation of the hydrogenated GaAs. Annealing at temperatures between 90 and 160° C for various times, with a reverse bias applied to the Schottky diode, allowed us to observe the reactivation of the Zn-acceptors in the high-field space-charge region of the diode. The thermal dissociation of the electrically neutral ZnH complex is found to obey first-order kinetics, with a dissociation energy E_ZnH = 1.33 ± 0.03 eV.

Original language	English
Pages (from-to)	390-394
Number of pages	5
Journal	Applied Surface Science
Volume	50
Issue number	1-4
DOIs	https://doi.org/10.1016/0169-4332(91)90204-W
State	Published - 2 Jun 1991
Externally published	Yes

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title = "Hydrogen passivation and reactivation of shallow Zn acceptors in GaAs",

abstract = "We report on a study of the hydrogenation of melt-grown Zn-doped GaAs, using a remote DC plasma system. Depth profiles of the free carrier concentration revealed the extent of passivation of the hydrogenated GaAs. Annealing at temperatures between 90 and 160° C for various times, with a reverse bias applied to the Schottky diode, allowed us to observe the reactivation of the Zn-acceptors in the high-field space-charge region of the diode. The thermal dissociation of the electrically neutral ZnH complex is found to obey first-order kinetics, with a dissociation energy EZnH = 1.33 ± 0.03 eV.",

author = "Leitch, {A. W.R.} and Th Prescha and M. Stutzmann",

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T1 - Hydrogen passivation and reactivation of shallow Zn acceptors in GaAs

AU - Leitch, A. W.R.

AU - Prescha, Th

AU - Stutzmann, M.

PY - 1991/6/2

Y1 - 1991/6/2

N2 - We report on a study of the hydrogenation of melt-grown Zn-doped GaAs, using a remote DC plasma system. Depth profiles of the free carrier concentration revealed the extent of passivation of the hydrogenated GaAs. Annealing at temperatures between 90 and 160° C for various times, with a reverse bias applied to the Schottky diode, allowed us to observe the reactivation of the Zn-acceptors in the high-field space-charge region of the diode. The thermal dissociation of the electrically neutral ZnH complex is found to obey first-order kinetics, with a dissociation energy EZnH = 1.33 ± 0.03 eV.

AB - We report on a study of the hydrogenation of melt-grown Zn-doped GaAs, using a remote DC plasma system. Depth profiles of the free carrier concentration revealed the extent of passivation of the hydrogenated GaAs. Annealing at temperatures between 90 and 160° C for various times, with a reverse bias applied to the Schottky diode, allowed us to observe the reactivation of the Zn-acceptors in the high-field space-charge region of the diode. The thermal dissociation of the electrically neutral ZnH complex is found to obey first-order kinetics, with a dissociation energy EZnH = 1.33 ± 0.03 eV.

UR - http://www.scopus.com/inward/record.url?scp=0026413673&partnerID=8YFLogxK

U2 - 10.1016/0169-4332(91)90204-W

DO - 10.1016/0169-4332(91)90204-W

M3 - Article

AN - SCOPUS:0026413673

SN - 0169-4332

VL - 50

SP - 390

EP - 394

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

Hydrogen passivation and reactivation of shallow Zn acceptors in GaAs

Abstract

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