Hydrogen-induced transport properties of holes in diamond surface layers

C. E. Nebel; C. Sauerer; F. Ertl; M. Stutzmann; C. F.O. Graeff; P. Bergonzo; O. A. Williams; R. Jackman

doi:10.1063/1.1429756

Hydrogen-induced transport properties of holes in diamond surface layers

C. E. Nebel
, C. Sauerer
, F. Ertl
, M. Stutzmann
, C. F.O. Graeff
, P. Bergonzo
, O. A. Williams
, R. Jackman

TUM Emeriti of Excellence

Walter Schottky Institut
University of São Paulo
CEA
University College London

Research output: Contribution to journal › Article › peer-review

89 Scopus citations

Abstract

Three hydrogen-terminated diamonds with different surface roughness and morphologies have been investigated by conductivity and Hall experiments in the temperature regime 0.34-350 K. The sheet hole densities are weakly temperature dependent above a critical temperature T_c (20 K≤T_c≤70 K), below T_c carriers freeze out. The mobilities of holes show a minimum at T_c increasing towards higher and even stronger towards lower temperatures significantly up to 400 cm²/V s. A transport model is introduced where holes propagate in the valence band where a disorder-induced tail of localized states is present.

Original language	English
Pages (from-to)	4541-4543
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	27
DOIs	https://doi.org/10.1063/1.1429756
State	Published - 31 Dec 2001

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title = "Hydrogen-induced transport properties of holes in diamond surface layers",

abstract = "Three hydrogen-terminated diamonds with different surface roughness and morphologies have been investigated by conductivity and Hall experiments in the temperature regime 0.34-350 K. The sheet hole densities are weakly temperature dependent above a critical temperature Tc (20 K≤Tc≤70 K), below Tc carriers freeze out. The mobilities of holes show a minimum at Tc increasing towards higher and even stronger towards lower temperatures significantly up to 400 cm2/V s. A transport model is introduced where holes propagate in the valence band where a disorder-induced tail of localized states is present.",

author = "Nebel, \{C. E.\} and C. Sauerer and F. Ertl and M. Stutzmann and Graeff, \{C. F.O.\} and P. Bergonzo and Williams, \{O. A.\} and R. Jackman",

year = "2001",

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doi = "10.1063/1.1429756",

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T1 - Hydrogen-induced transport properties of holes in diamond surface layers

AU - Nebel, C. E.

AU - Sauerer, C.

AU - Ertl, F.

AU - Stutzmann, M.

AU - Graeff, C. F.O.

AU - Bergonzo, P.

AU - Williams, O. A.

AU - Jackman, R.

PY - 2001/12/31

Y1 - 2001/12/31

N2 - Three hydrogen-terminated diamonds with different surface roughness and morphologies have been investigated by conductivity and Hall experiments in the temperature regime 0.34-350 K. The sheet hole densities are weakly temperature dependent above a critical temperature Tc (20 K≤Tc≤70 K), below Tc carriers freeze out. The mobilities of holes show a minimum at Tc increasing towards higher and even stronger towards lower temperatures significantly up to 400 cm2/V s. A transport model is introduced where holes propagate in the valence band where a disorder-induced tail of localized states is present.

AB - Three hydrogen-terminated diamonds with different surface roughness and morphologies have been investigated by conductivity and Hall experiments in the temperature regime 0.34-350 K. The sheet hole densities are weakly temperature dependent above a critical temperature Tc (20 K≤Tc≤70 K), below Tc carriers freeze out. The mobilities of holes show a minimum at Tc increasing towards higher and even stronger towards lower temperatures significantly up to 400 cm2/V s. A transport model is introduced where holes propagate in the valence band where a disorder-induced tail of localized states is present.

UR - https://www.scopus.com/pages/publications/0035981041

U2 - 10.1063/1.1429756

DO - 10.1063/1.1429756

M3 - Article

AN - SCOPUS:0035981041

SN - 0003-6951

VL - 79

SP - 4541

EP - 4543

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 27

ER -

Hydrogen-induced transport properties of holes in diamond surface layers

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