Abstract
The electronic and structural properties of the oxygen vacancy (V O) in rutile TiO2 are studied using generalized Kohn-Sham theory with the Heyd, Scuseria, and Ernzerhof (HSE) hybrid functional for exchange and correlation. The HSE approach corrects the band gap and allows for a proper description of defects with energy levels close to the conduction band. According to the HSE calculations, VO is a shallow donor for which the +2 charge state is lower in energy than the neutral and +1 charge states for all Fermi-level positions in the band gap. The formation energy of V 2+O is relatively low in n -type TiO2 under O-poor conditions but it rapidly increases with the oxygen chemical potential. This is consistent with experimental observations where the electrical conductivity decreases with oxygen partial pressure.
Original language | English |
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Article number | 085212 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 81 |
Issue number | 8 |
DOIs | |
State | Published - 16 Feb 2010 |
Externally published | Yes |