TY - GEN
T1 - Hot carrier degradation of the low frequency noise of MOS transistors under analog operating conditions
AU - Brederlow, Ralf
AU - Weber, Werner
AU - Schmitt-Landsiedel, Doris
AU - Thewes, Roland
PY - 1999
Y1 - 1999
N2 - The hot carrier degradation of the 1/f-noise behavior of n- and p-MOS transistors under typical analog operating conditions is investigated. Contrary to previous results it is shown that the noise magnitude in saturation mode in short channel devices significantly increases after hot carrier degradation. In low noise circuits this increase can become a major reliability issue. In this paper, the mechanisms responsible for this degradation effect and the resulting analog circuit design considerations are discussed.
AB - The hot carrier degradation of the 1/f-noise behavior of n- and p-MOS transistors under typical analog operating conditions is investigated. Contrary to previous results it is shown that the noise magnitude in saturation mode in short channel devices significantly increases after hot carrier degradation. In low noise circuits this increase can become a major reliability issue. In this paper, the mechanisms responsible for this degradation effect and the resulting analog circuit design considerations are discussed.
UR - http://www.scopus.com/inward/record.url?scp=0032645506&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0032645506
SN - 0780352203
T3 - Annual Proceedings - Reliability Physics (Symposium)
SP - 239
EP - 242
BT - Annual Proceedings - Reliability Physics (Symposium)
PB - IEEE
T2 - Proceedings of the 1999 37th Annual IEEE International Reliability Physics Symposium
Y2 - 23 March 1999 through 25 March 1999
ER -