Homoleptic gadolinium guanidinate: A single source precursor for metal-organic chemical vapor deposition of gadolinium nitride thin films

Andrian P. Milanov; Tobias B. Thiede; Anjana Devi; Roland A. Fischer

doi:10.1021/ja907952g

Homoleptic gadolinium guanidinate: A single source precursor for metal-organic chemical vapor deposition of gadolinium nitride thin films

Andrian P. Milanov
, Tobias B. Thiede
, Anjana Devi
, Roland A. Fischer

Max-Planck-lnstitut für Kohlenforschung

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

(Chemical Equation Presented) Deposition of a rare earth nitride thin film using a chemical gas phase deposition technique is reported for the first time. The gadolinium tris-guanidinate complex [Gd{(iPrN)₂CNMe ₂}₃] is found to be an effective single source precursor for the MOCVD growth of gadolinium nitride (GdN) thin films.

Original language	English
Pages (from-to)	17062-17063
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	131
Issue number	47
DOIs	https://doi.org/10.1021/ja907952g
State	Published - 2 Dec 2009
Externally published	Yes

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title = "Homoleptic gadolinium guanidinate: A single source precursor for metal-organic chemical vapor deposition of gadolinium nitride thin films",

abstract = "(Chemical Equation Presented) Deposition of a rare earth nitride thin film using a chemical gas phase deposition technique is reported for the first time. The gadolinium tris-guanidinate complex [Gd\{(iPrN)2CNMe 2\}3] is found to be an effective single source precursor for the MOCVD growth of gadolinium nitride (GdN) thin films.",

author = "Milanov, \{Andrian P.\} and Thiede, \{Tobias B.\} and Anjana Devi and Fischer, \{Roland A.\}",

year = "2009",

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doi = "10.1021/ja907952g",

language = "English",

volume = "131",

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journal = "Journal of the American Chemical Society",

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T1 - Homoleptic gadolinium guanidinate

T2 - A single source precursor for metal-organic chemical vapor deposition of gadolinium nitride thin films

AU - Milanov, Andrian P.

AU - Thiede, Tobias B.

AU - Devi, Anjana

AU - Fischer, Roland A.

PY - 2009/12/2

Y1 - 2009/12/2

N2 - (Chemical Equation Presented) Deposition of a rare earth nitride thin film using a chemical gas phase deposition technique is reported for the first time. The gadolinium tris-guanidinate complex [Gd{(iPrN)2CNMe 2}3] is found to be an effective single source precursor for the MOCVD growth of gadolinium nitride (GdN) thin films.

AB - (Chemical Equation Presented) Deposition of a rare earth nitride thin film using a chemical gas phase deposition technique is reported for the first time. The gadolinium tris-guanidinate complex [Gd{(iPrN)2CNMe 2}3] is found to be an effective single source precursor for the MOCVD growth of gadolinium nitride (GdN) thin films.

UR - https://www.scopus.com/pages/publications/72249111969

U2 - 10.1021/ja907952g

DO - 10.1021/ja907952g

M3 - Article

AN - SCOPUS:72249111969

SN - 0002-7863

VL - 131

SP - 17062

EP - 17063

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

IS - 47

ER -

Homoleptic gadolinium guanidinate: A single source precursor for metal-organic chemical vapor deposition of gadolinium nitride thin films

Abstract

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