Hole emission from Ge/Si quantum dots studied by time-resolved capacitance spectroscopy

C. M.A. Kapteyn; M. Lion; R. Heitz; D. Bimberg; C. Miesner; T. Asperger; K. Brunner; G. Abstreiter

doi:10.1002/1521-3951(200103)224:1<261::AID-PSSB261>3.0.CO;2-3

Hole emission from Ge/Si quantum dots studied by time-resolved capacitance spectroscopy

C. M.A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, C. Miesner, T. Asperger, K. Brunner, G. Abstreiter

Natural Sciences

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Emission of holes from self-organized Ge quantum dots (QDs) embedded in Si Schottky diodes is studied by time-resolved capacitance spectroscopy (DLTS). The DLTS signal is rather broad and depends strongly on the filling and detection bias conditions. The observed dependence is interpreted in terms of carrier emission from many-hole states of the QDs. The activation energies obtained from the DLTS measurements are a function of the amount of stored charge and the position of the Fermi level in the QDs.

Original language	English
Pages (from-to)	261-264
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	224
Issue number	1
DOIs	https://doi.org/10.1002/1521-3951(200103)224:1<261::AID-PSSB261>3.0.CO;2-3
State	Published - Mar 2001

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abstract = "Emission of holes from self-organized Ge quantum dots (QDs) embedded in Si Schottky diodes is studied by time-resolved capacitance spectroscopy (DLTS). The DLTS signal is rather broad and depends strongly on the filling and detection bias conditions. The observed dependence is interpreted in terms of carrier emission from many-hole states of the QDs. The activation energies obtained from the DLTS measurements are a function of the amount of stored charge and the position of the Fermi level in the QDs.",

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AU - Kapteyn, C. M.A.

AU - Lion, M.

AU - Heitz, R.

AU - Bimberg, D.

AU - Miesner, C.

AU - Asperger, T.

AU - Brunner, K.

AU - Abstreiter, G.

PY - 2001/3

Y1 - 2001/3

N2 - Emission of holes from self-organized Ge quantum dots (QDs) embedded in Si Schottky diodes is studied by time-resolved capacitance spectroscopy (DLTS). The DLTS signal is rather broad and depends strongly on the filling and detection bias conditions. The observed dependence is interpreted in terms of carrier emission from many-hole states of the QDs. The activation energies obtained from the DLTS measurements are a function of the amount of stored charge and the position of the Fermi level in the QDs.

AB - Emission of holes from self-organized Ge quantum dots (QDs) embedded in Si Schottky diodes is studied by time-resolved capacitance spectroscopy (DLTS). The DLTS signal is rather broad and depends strongly on the filling and detection bias conditions. The observed dependence is interpreted in terms of carrier emission from many-hole states of the QDs. The activation energies obtained from the DLTS measurements are a function of the amount of stored charge and the position of the Fermi level in the QDs.

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JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

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Hole emission from Ge/Si quantum dots studied by time-resolved capacitance spectroscopy

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